Preparation and Characterization of Sol-Gel Derived Y2O3 Thin Films

G. Teowee; K. C. McCarthy; F. S. McCarthy; T. J. Bukowski; D. G. Davis; D. R. Uhlmann

doi:10.1023/a:1008671206691

Preparation and Characterization of Sol-Gel Derived Y₂O₃ Thin Films

G. Teowee, K. C. McCarthy, F. S. McCarthy, T. J. Bukowski, D. G. Davis, D. R. Uhlmann

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Sol-gel derived Y₂O₃ thin films have been prepared on platinum coated silicon wafers and fired to temperatures ranging from 400°C to 750°C. Multiple coats were used to obtain films up to 0.5 μm thick with an intermediate firing of 400°C between coatings. Top Pt electrodes were sputtered to form monolithic capacitors. These films exhibited a dielectric constant of 18 and a leakage current of 10¹¹-10⁷ A/cm², making them attractive candidates for high dielectric constant dielectric films in high density DRAMs.

Original language	English (US)
Pages (from-to)	895-898
Number of pages	4
Journal	Journal of Sol-Gel Science and Technology
Volume	13
Issue number	1-3
DOIs	https://doi.org/10.1023/a:1008671206691
State	Published - Jan 1998

Keywords

Dielectric
Ferroelectric
Films
Yttrium oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
General Chemistry
Biomaterials
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1023/a:1008671206691

Cite this

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abstract = "Sol-gel derived Y2O3 thin films have been prepared on platinum coated silicon wafers and fired to temperatures ranging from 400°C to 750°C. Multiple coats were used to obtain films up to 0.5 μm thick with an intermediate firing of 400°C between coatings. Top Pt electrodes were sputtered to form monolithic capacitors. These films exhibited a dielectric constant of 18 and a leakage current of 1011-107 A/cm2, making them attractive candidates for high dielectric constant dielectric films in high density DRAMs.",

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AU - Davis, D. G.

AU - Uhlmann, D. R.

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AB - Sol-gel derived Y2O3 thin films have been prepared on platinum coated silicon wafers and fired to temperatures ranging from 400°C to 750°C. Multiple coats were used to obtain films up to 0.5 μm thick with an intermediate firing of 400°C between coatings. Top Pt electrodes were sputtered to form monolithic capacitors. These films exhibited a dielectric constant of 18 and a leakage current of 1011-107 A/cm2, making them attractive candidates for high dielectric constant dielectric films in high density DRAMs.

KW - Dielectric

KW - Ferroelectric

KW - Films

KW - Yttrium oxide

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