Abstract
Sol-gel derived Bi4Ti3O12 thin films have been prepared on platinized Si wafers and fired to temperatures ranging from 550 °C to 700 °C. Excess Bi was incorporated in the precursor solutions to determine its effects on dielectric and ferroelectric properties. Multiple spincoating with an intermediate firing of 400 °C between coatings was performed to obtain films up to 0.5 μm thick. Single phase Bi4Ti3O12 films were obtained when fired at 600 °C which exhibited a dielectric constant of 225.
| Original language | English (US) |
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| Pages | 589-592 |
| Number of pages | 4 |
| State | Published - 1996 |
| Event | Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA Duration: Aug 18 1996 → Aug 21 1996 |
Other
| Other | Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) |
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| City | East Brunswick, NJ, USA |
| Period | 8/18/96 → 8/21/96 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering