Preparation and characterization of sol-gel derived Bi4Ti3O12 thin films

T. J. Bukowski; T. P. Alexander; D. R. Uhlmann; G. Teowee; K. C. McCarthy

Preparation and characterization of sol-gel derived Bi₄Ti₃O₁₂ thin films

T. J. Bukowski, T. P. Alexander, D. R. Uhlmann, G. Teowee, K. C. McCarthy

Research output: Contribution to conference › Paper › peer-review

Abstract

Sol-gel derived Bi₄Ti₃O₁₂ thin films have been prepared on platinized Si wafers and fired to temperatures ranging from 550 °C to 700 °C. Excess Bi was incorporated in the precursor solutions to determine its effects on dielectric and ferroelectric properties. Multiple spincoating with an intermediate firing of 400 °C between coatings was performed to obtain films up to 0.5 μm thick. Single phase Bi₄Ti₃O₁₂ films were obtained when fired at 600 °C which exhibited a dielectric constant of 225.

Original language	English (US)
Pages	589-592
Number of pages	4
State	Published - 1996
Event	Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) - East Brunswick, NJ, USA Duration: Aug 18 1996 → Aug 21 1996

Other

Other	Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)
City	East Brunswick, NJ, USA
Period	8/18/96 → 8/21/96

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Preparation and characterization of sol-gel derived Bi₄Ti₃O₁₂ thin films. / Bukowski, T. J.; Alexander, T. P.; Uhlmann, D. R. et al.
1996. 589-592 Paper presented at Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2), East Brunswick, NJ, USA.

Research output: Contribution to conference › Paper › peer-review

@conference{8f1d6fc221fa4fbf8e3659d8f8a2a4e3,

title = "Preparation and characterization of sol-gel derived Bi4Ti3O12 thin films",

abstract = "Sol-gel derived Bi4Ti3O12 thin films have been prepared on platinized Si wafers and fired to temperatures ranging from 550 °C to 700 °C. Excess Bi was incorporated in the precursor solutions to determine its effects on dielectric and ferroelectric properties. Multiple spincoating with an intermediate firing of 400 °C between coatings was performed to obtain films up to 0.5 μm thick. Single phase Bi4Ti3O12 films were obtained when fired at 600 °C which exhibited a dielectric constant of 225.",

author = "Bukowski, {T. J.} and Alexander, {T. P.} and Uhlmann, {D. R.} and G. Teowee and McCarthy, {K. C.}",

year = "1996",

language = "English (US)",

pages = "589--592",

note = "Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2) ; Conference date: 18-08-1996 Through 21-08-1996",

}

TY - CONF

T1 - Preparation and characterization of sol-gel derived Bi4Ti3O12 thin films

AU - Bukowski, T. J.

AU - Alexander, T. P.

AU - Uhlmann, D. R.

AU - Teowee, G.

AU - McCarthy, K. C.

PY - 1996

Y1 - 1996

N2 - Sol-gel derived Bi4Ti3O12 thin films have been prepared on platinized Si wafers and fired to temperatures ranging from 550 °C to 700 °C. Excess Bi was incorporated in the precursor solutions to determine its effects on dielectric and ferroelectric properties. Multiple spincoating with an intermediate firing of 400 °C between coatings was performed to obtain films up to 0.5 μm thick. Single phase Bi4Ti3O12 films were obtained when fired at 600 °C which exhibited a dielectric constant of 225.

AB - Sol-gel derived Bi4Ti3O12 thin films have been prepared on platinized Si wafers and fired to temperatures ranging from 550 °C to 700 °C. Excess Bi was incorporated in the precursor solutions to determine its effects on dielectric and ferroelectric properties. Multiple spincoating with an intermediate firing of 400 °C between coatings was performed to obtain films up to 0.5 μm thick. Single phase Bi4Ti3O12 films were obtained when fired at 600 °C which exhibited a dielectric constant of 225.

UR - http://www.scopus.com/inward/record.url?scp=0030369670&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030369670&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030369670

SP - 589

EP - 592

T2 - Proceedings of the 1996 10th IEEE International Symposium on Applications of Ferroelectrics, ISAF. Part 1 (of 2)

Y2 - 18 August 1996 through 21 August 1996

ER -

Preparation and characterization of sol-gel derived Bi₄Ti₃O₁₂ thin films

Abstract

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ASJC Scopus subject areas

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