Abstract
Based on fully microscopically computed material gain and carrier recombination rates, we compute the output characteristics of optically pumped Vertical External Cavity Surface Emitting Lasers. Very good agreement with experimental results is obtained where, besides broadenings introduced to model sample imperfections, the only experimental fit parameter is a correction to the pump spot diameter to account for the nonideal profile of the used pump.
Original language | English (US) |
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Article number | 5423325 |
Pages (from-to) | 810-817 |
Number of pages | 8 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 46 |
Issue number | 5 |
DOIs | |
State | Published - 2010 |
Keywords
- Charge carrier lifetime
- Modeling
- Photoluminescence
- Reflection
- Semiconductor lasers
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering