Post plasma etch residue removal in dilute HF solutions

D. P.R. Thanu, S. Raghavan, M. Keswani

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Effectiveness of dilute HF solutions in selectively removing fluorine based plasma etch residue films (PER) with respect to copper has been investigated. PER films were generated by CF4/O2 etching of cresol novolak based photoresist films that were spin coated on copper. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) studies were performed to investigate the PER removal using dilute HF solutions (0.05-0.2 vol. ) and the removal was further confirmed using electrochemical impedance spectroscopy. PER removal rate of ∼60 /min was obtained using 0.2 vol HF (pH 2.8). Higher selectivity of PER/Cu was achieved under deaerated conditions compared to aerated conditions.

Original languageEnglish (US)
Pages (from-to)H814-H820
JournalJournal of the Electrochemical Society
Issue number8
StatePublished - Aug 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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