Post plasma etch residue removal in dilute HF solutions

D. P.R. Thanu, S. Raghavan, M. Keswani

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


Effectiveness of dilute HF solutions in selectively removing fluorine based plasma etch residue films (PER) with respect to copper has been investigated. PER films were generated by CF4/O2 etching of cresol novolak based photoresist films that were spin coated on copper. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) studies were performed to investigate the PER removal using dilute HF solutions (0.05-0.2 vol. ) and the removal was further confirmed using electrochemical impedance spectroscopy. PER removal rate of ∼60 /min was obtained using 0.2 vol HF (pH 2.8). Higher selectivity of PER/Cu was achieved under deaerated conditions compared to aerated conditions.

Original languageEnglish (US)
Pages (from-to)H814-H820
JournalJournal of the Electrochemical Society
Issue number8
StatePublished - Aug 2011
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Renewable Energy, Sustainability and the Environment


Dive into the research topics of 'Post plasma etch residue removal in dilute HF solutions'. Together they form a unique fingerprint.

Cite this