Post plasma etch residue removal in dilute HF solutions

D. P.R. Thanu; S. Raghavan; M. Keswani

doi:10.1149/1.3597618

Post plasma etch residue removal in dilute HF solutions

D. P.R. Thanu, S. Raghavan, M. Keswani

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Effectiveness of dilute HF solutions in selectively removing fluorine based plasma etch residue films (PER) with respect to copper has been investigated. PER films were generated by CF₄/O₂ etching of cresol novolak based photoresist films that were spin coated on copper. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) studies were performed to investigate the PER removal using dilute HF solutions (0.05-0.2 vol. ) and the removal was further confirmed using electrochemical impedance spectroscopy. PER removal rate of ∼60 /min was obtained using 0.2 vol HF (pH 2.8). Higher selectivity of PER/Cu was achieved under deaerated conditions compared to aerated conditions.

Original language	English (US)
Pages (from-to)	H814-H820
Journal	Journal of the Electrochemical Society
Volume	158
Issue number	8
DOIs	https://doi.org/10.1149/1.3597618
State	Published - Aug 2011
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Surfaces, Coatings and Films
Electrochemistry
Renewable Energy, Sustainability and the Environment

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title = "Post plasma etch residue removal in dilute HF solutions",

abstract = "Effectiveness of dilute HF solutions in selectively removing fluorine based plasma etch residue films (PER) with respect to copper has been investigated. PER films were generated by CF4/O2 etching of cresol novolak based photoresist films that were spin coated on copper. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) studies were performed to investigate the PER removal using dilute HF solutions (0.05-0.2 vol. ) and the removal was further confirmed using electrochemical impedance spectroscopy. PER removal rate of ∼60 /min was obtained using 0.2 vol HF (pH 2.8). Higher selectivity of PER/Cu was achieved under deaerated conditions compared to aerated conditions.",

author = "Thanu, {D. P.R.} and S. Raghavan and M. Keswani",

year = "2011",

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T1 - Post plasma etch residue removal in dilute HF solutions

AU - Thanu, D. P.R.

AU - Raghavan, S.

AU - Keswani, M.

PY - 2011/8

Y1 - 2011/8

N2 - Effectiveness of dilute HF solutions in selectively removing fluorine based plasma etch residue films (PER) with respect to copper has been investigated. PER films were generated by CF4/O2 etching of cresol novolak based photoresist films that were spin coated on copper. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) studies were performed to investigate the PER removal using dilute HF solutions (0.05-0.2 vol. ) and the removal was further confirmed using electrochemical impedance spectroscopy. PER removal rate of ∼60 /min was obtained using 0.2 vol HF (pH 2.8). Higher selectivity of PER/Cu was achieved under deaerated conditions compared to aerated conditions.

AB - Effectiveness of dilute HF solutions in selectively removing fluorine based plasma etch residue films (PER) with respect to copper has been investigated. PER films were generated by CF4/O2 etching of cresol novolak based photoresist films that were spin coated on copper. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) studies were performed to investigate the PER removal using dilute HF solutions (0.05-0.2 vol. ) and the removal was further confirmed using electrochemical impedance spectroscopy. PER removal rate of ∼60 /min was obtained using 0.2 vol HF (pH 2.8). Higher selectivity of PER/Cu was achieved under deaerated conditions compared to aerated conditions.

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Post plasma etch residue removal in dilute HF solutions

Abstract

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