Post-etch residue removal using choline chloride-malonic acid deep eutectic solvent (DES)

Jenny Taubert; Manish Keswani; Srini Raghavan

doi:10.1016/j.mee.2011.11.014

Post-etch residue removal using choline chloride-malonic acid deep eutectic solvent (DES)

Jenny Taubert
, Manish Keswani
, Srini Raghavan

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Eutectic mixture of choline chloride (CC) and malonic acid (MA) in a molar ratio of 1:1 has been evaluated as a potential chemical system for the removal of residues produced by CF ₄/O ₂ plasma etching of copper coated with DUV photoresist. Immersion cleaning was performed in the liquid at the eutectic composition at 40 and 70 °C. Residue removal rate was screened using scanning electron microscopy and verified using X-ray photoelectron spectroscopy and electrochemical impedance spectroscopy measurements. The results presented in this paper show that choline chloride-malonic acid eutectic is effective in removing post-etch residues and has the potential to function as a back end of line cleaning formulation.

Original language	English (US)
Pages (from-to)	81-86
Number of pages	6
Journal	Microelectronic Engineering
Volume	102
DOIs	https://doi.org/10.1016/j.mee.2011.11.014
State	Published - Feb 2013
Externally published	Yes

Keywords

BEOL cleaning
Deep eutectic solvent
Electrochemical impedance spectroscopy
Post-etch residue removal

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2011.11.014

Cite this

@article{b5dcb6fb696b4b26b54f189b5f5e338f,

title = "Post-etch residue removal using choline chloride-malonic acid deep eutectic solvent (DES)",

abstract = "Eutectic mixture of choline chloride (CC) and malonic acid (MA) in a molar ratio of 1:1 has been evaluated as a potential chemical system for the removal of residues produced by CF 4/O 2 plasma etching of copper coated with DUV photoresist. Immersion cleaning was performed in the liquid at the eutectic composition at 40 and 70 °C. Residue removal rate was screened using scanning electron microscopy and verified using X-ray photoelectron spectroscopy and electrochemical impedance spectroscopy measurements. The results presented in this paper show that choline chloride-malonic acid eutectic is effective in removing post-etch residues and has the potential to function as a back end of line cleaning formulation.",

keywords = "BEOL cleaning, Deep eutectic solvent, Electrochemical impedance spectroscopy, Post-etch residue removal",

author = "Jenny Taubert and Manish Keswani and Srini Raghavan",

note = "Funding Information: The authors would like to acknowledge the financial support from SRC/Sematech Engineering Research Center for Environmentally Benign Manufacturing at The University of Arizona through contract \#2001-MC-424. The authors would like also to acknowledge fruitful discussions with Mr. Dinesh Thanu, whose previous work on CC/U DES created the basis for this project.",

year = "2013",

month = feb,

doi = "10.1016/j.mee.2011.11.014",

language = "English (US)",

volume = "102",

pages = "81--86",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Post-etch residue removal using choline chloride-malonic acid deep eutectic solvent (DES)

AU - Taubert, Jenny

AU - Keswani, Manish

AU - Raghavan, Srini

N1 - Funding Information: The authors would like to acknowledge the financial support from SRC/Sematech Engineering Research Center for Environmentally Benign Manufacturing at The University of Arizona through contract #2001-MC-424. The authors would like also to acknowledge fruitful discussions with Mr. Dinesh Thanu, whose previous work on CC/U DES created the basis for this project.

PY - 2013/2

Y1 - 2013/2

N2 - Eutectic mixture of choline chloride (CC) and malonic acid (MA) in a molar ratio of 1:1 has been evaluated as a potential chemical system for the removal of residues produced by CF 4/O 2 plasma etching of copper coated with DUV photoresist. Immersion cleaning was performed in the liquid at the eutectic composition at 40 and 70 °C. Residue removal rate was screened using scanning electron microscopy and verified using X-ray photoelectron spectroscopy and electrochemical impedance spectroscopy measurements. The results presented in this paper show that choline chloride-malonic acid eutectic is effective in removing post-etch residues and has the potential to function as a back end of line cleaning formulation.

AB - Eutectic mixture of choline chloride (CC) and malonic acid (MA) in a molar ratio of 1:1 has been evaluated as a potential chemical system for the removal of residues produced by CF 4/O 2 plasma etching of copper coated with DUV photoresist. Immersion cleaning was performed in the liquid at the eutectic composition at 40 and 70 °C. Residue removal rate was screened using scanning electron microscopy and verified using X-ray photoelectron spectroscopy and electrochemical impedance spectroscopy measurements. The results presented in this paper show that choline chloride-malonic acid eutectic is effective in removing post-etch residues and has the potential to function as a back end of line cleaning formulation.

KW - BEOL cleaning

KW - Deep eutectic solvent

KW - Electrochemical impedance spectroscopy

KW - Post-etch residue removal

UR - https://www.scopus.com/pages/publications/84869079598

UR - https://www.scopus.com/pages/publications/84869079598#tab=citedBy

U2 - 10.1016/j.mee.2011.11.014

DO - 10.1016/j.mee.2011.11.014

M3 - Article

AN - SCOPUS:84869079598

SN - 0167-9317

VL - 102

SP - 81

EP - 86

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Post-etch residue removal using choline chloride-malonic acid deep eutectic solvent (DES)

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this