Post-etch residue removal using choline chloride-malonic acid deep eutectic solvent (DES)

Jenny Taubert; Manish Keswani; Srini Raghavan

doi:10.1016/j.mee.2011.11.014

Post-etch residue removal using choline chloride-malonic acid deep eutectic solvent (DES)

Jenny Taubert, Manish Keswani, Srini Raghavan

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Eutectic mixture of choline chloride (CC) and malonic acid (MA) in a molar ratio of 1:1 has been evaluated as a potential chemical system for the removal of residues produced by CF ₄/O ₂ plasma etching of copper coated with DUV photoresist. Immersion cleaning was performed in the liquid at the eutectic composition at 40 and 70 °C. Residue removal rate was screened using scanning electron microscopy and verified using X-ray photoelectron spectroscopy and electrochemical impedance spectroscopy measurements. The results presented in this paper show that choline chloride-malonic acid eutectic is effective in removing post-etch residues and has the potential to function as a back end of line cleaning formulation.

Original language	English (US)
Pages (from-to)	81-86
Number of pages	6
Journal	Microelectronic Engineering
Volume	102
DOIs	https://doi.org/10.1016/j.mee.2011.11.014
State	Published - Feb 2013
Externally published	Yes

Keywords

BEOL cleaning
Deep eutectic solvent
Electrochemical impedance spectroscopy
Post-etch residue removal

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2011.11.014

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@article{b5dcb6fb696b4b26b54f189b5f5e338f,

title = "Post-etch residue removal using choline chloride-malonic acid deep eutectic solvent (DES)",

abstract = "Eutectic mixture of choline chloride (CC) and malonic acid (MA) in a molar ratio of 1:1 has been evaluated as a potential chemical system for the removal of residues produced by CF 4/O 2 plasma etching of copper coated with DUV photoresist. Immersion cleaning was performed in the liquid at the eutectic composition at 40 and 70 °C. Residue removal rate was screened using scanning electron microscopy and verified using X-ray photoelectron spectroscopy and electrochemical impedance spectroscopy measurements. The results presented in this paper show that choline chloride-malonic acid eutectic is effective in removing post-etch residues and has the potential to function as a back end of line cleaning formulation.",

keywords = "BEOL cleaning, Deep eutectic solvent, Electrochemical impedance spectroscopy, Post-etch residue removal",

author = "Jenny Taubert and Manish Keswani and Srini Raghavan",

note = "Funding Information: The authors would like to acknowledge the financial support from SRC/Sematech Engineering Research Center for Environmentally Benign Manufacturing at The University of Arizona through contract #2001-MC-424. The authors would like also to acknowledge fruitful discussions with Mr. Dinesh Thanu, whose previous work on CC/U DES created the basis for this project.",

year = "2013",

month = feb,

doi = "10.1016/j.mee.2011.11.014",

language = "English (US)",

volume = "102",

pages = "81--86",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

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T1 - Post-etch residue removal using choline chloride-malonic acid deep eutectic solvent (DES)

AU - Taubert, Jenny

AU - Keswani, Manish

AU - Raghavan, Srini

N1 - Funding Information: The authors would like to acknowledge the financial support from SRC/Sematech Engineering Research Center for Environmentally Benign Manufacturing at The University of Arizona through contract #2001-MC-424. The authors would like also to acknowledge fruitful discussions with Mr. Dinesh Thanu, whose previous work on CC/U DES created the basis for this project.

PY - 2013/2

Y1 - 2013/2

N2 - Eutectic mixture of choline chloride (CC) and malonic acid (MA) in a molar ratio of 1:1 has been evaluated as a potential chemical system for the removal of residues produced by CF 4/O 2 plasma etching of copper coated with DUV photoresist. Immersion cleaning was performed in the liquid at the eutectic composition at 40 and 70 °C. Residue removal rate was screened using scanning electron microscopy and verified using X-ray photoelectron spectroscopy and electrochemical impedance spectroscopy measurements. The results presented in this paper show that choline chloride-malonic acid eutectic is effective in removing post-etch residues and has the potential to function as a back end of line cleaning formulation.

AB - Eutectic mixture of choline chloride (CC) and malonic acid (MA) in a molar ratio of 1:1 has been evaluated as a potential chemical system for the removal of residues produced by CF 4/O 2 plasma etching of copper coated with DUV photoresist. Immersion cleaning was performed in the liquid at the eutectic composition at 40 and 70 °C. Residue removal rate was screened using scanning electron microscopy and verified using X-ray photoelectron spectroscopy and electrochemical impedance spectroscopy measurements. The results presented in this paper show that choline chloride-malonic acid eutectic is effective in removing post-etch residues and has the potential to function as a back end of line cleaning formulation.

KW - BEOL cleaning

KW - Deep eutectic solvent

KW - Electrochemical impedance spectroscopy

KW - Post-etch residue removal

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EP - 86

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Post-etch residue removal using choline chloride-malonic acid deep eutectic solvent (DES)

Abstract

Keywords

ASJC Scopus subject areas

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