Polarization aberrations induced by graded multilayer coatings in EUV lithography scanners

Thiago S. Jota, Russell A. Chipman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


The functional form of coating-induced polarization aberrations in EUV lithography systems is evaluated through polarization ray tracing of an example 3×EUV scanner with state-of-the-art graded multilayer coatings. In particular, the impact of coating-induced on-axis astigmatism, as well as diattenuation and retardance on image quality are investigated. The point spread function (PSF) consists of four polarization-dependent components: two are nearly diffraction limited and two are highly apodized, and all components can be described by a Mueller matrix Point Spread Matrix (PSM). The highly apodized components are "ghost" images that are larger than the diffraction limit, reducing image contrast and resolution.

Original languageEnglish (US)
Title of host publicationExtreme Ultraviolet (EUV) Lithography VII
EditorsEric M. Panning, Kenneth A. Goldberg
ISBN (Electronic)9781510600119
StatePublished - 2016
EventExtreme Ultraviolet (EUV) Lithography VII - San Jose, United States
Duration: Feb 22 2016Feb 25 2016

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


OtherExtreme Ultraviolet (EUV) Lithography VII
Country/TerritoryUnited States
CitySan Jose


  • EUV
  • lithography
  • multilayer thin film coatings
  • polarization aberrations
  • polarization ray tracing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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