Plezoresistive microphone with integrated amplifier realized using metal-induced laterally crystallized polycrystalline silicon

Gang Li; Yitshak Zohar; Man Wong

Plezoresistive microphone with integrated amplifier realized using metal-induced laterally crystallized polycrystalline silicon

Research output: Contribution to journal › Conference article › peer-review

Abstract

Compared to conventional polycrystalline silicon (poly-Si), re-crystallized (RC) metal-induced laterally crystallized (MILC) poly-Si possesses improved mechanical and electrical properties. RC-MILC poly-Si piezoresistors exhibit ∼25% increase in gauge factor and ∼50% reduction in noise level compared to conventional poly-Si piezoresistors. RC-MILC poly-Si transistors exhibit performance approaching those built on single-crystal silicon. As a demonstration of the feasibility of using the RC-MILC poly-Si technology to realize non-trivial micro-systems, microphone integrating piezoresistive strain sensors and amplifiers has been designed, fabricated and characterized.

Original language	English (US)
Pages (from-to)	548-551
Number of pages	4
Journal	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
State	Published - 2004
Externally published	Yes
Event	17th IEEE International Conference on Micro Electro Mechanical Systems (MEMS): Maastricht MEMS 2004 Technical Digest - Maastricht, Netherlands Duration: Jan 25 2004 → Jan 29 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanical Engineering
Electrical and Electronic Engineering

Cite this

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title = "Plezoresistive microphone with integrated amplifier realized using metal-induced laterally crystallized polycrystalline silicon",

abstract = "Compared to conventional polycrystalline silicon (poly-Si), re-crystallized (RC) metal-induced laterally crystallized (MILC) poly-Si possesses improved mechanical and electrical properties. RC-MILC poly-Si piezoresistors exhibit ∼25% increase in gauge factor and ∼50% reduction in noise level compared to conventional poly-Si piezoresistors. RC-MILC poly-Si transistors exhibit performance approaching those built on single-crystal silicon. As a demonstration of the feasibility of using the RC-MILC poly-Si technology to realize non-trivial micro-systems, microphone integrating piezoresistive strain sensors and amplifiers has been designed, fabricated and characterized.",

author = "Gang Li and Yitshak Zohar and Man Wong",

year = "2004",

language = "English (US)",

pages = "548--551",

journal = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",

issn = "1084-6999",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "17th IEEE International Conference on Micro Electro Mechanical Systems (MEMS): Maastricht MEMS 2004 Technical Digest ; Conference date: 25-01-2004 Through 29-01-2004",

}

TY - JOUR

T1 - Plezoresistive microphone with integrated amplifier realized using metal-induced laterally crystallized polycrystalline silicon

AU - Li, Gang

AU - Zohar, Yitshak

AU - Wong, Man

PY - 2004

Y1 - 2004

N2 - Compared to conventional polycrystalline silicon (poly-Si), re-crystallized (RC) metal-induced laterally crystallized (MILC) poly-Si possesses improved mechanical and electrical properties. RC-MILC poly-Si piezoresistors exhibit ∼25% increase in gauge factor and ∼50% reduction in noise level compared to conventional poly-Si piezoresistors. RC-MILC poly-Si transistors exhibit performance approaching those built on single-crystal silicon. As a demonstration of the feasibility of using the RC-MILC poly-Si technology to realize non-trivial micro-systems, microphone integrating piezoresistive strain sensors and amplifiers has been designed, fabricated and characterized.

AB - Compared to conventional polycrystalline silicon (poly-Si), re-crystallized (RC) metal-induced laterally crystallized (MILC) poly-Si possesses improved mechanical and electrical properties. RC-MILC poly-Si piezoresistors exhibit ∼25% increase in gauge factor and ∼50% reduction in noise level compared to conventional poly-Si piezoresistors. RC-MILC poly-Si transistors exhibit performance approaching those built on single-crystal silicon. As a demonstration of the feasibility of using the RC-MILC poly-Si technology to realize non-trivial micro-systems, microphone integrating piezoresistive strain sensors and amplifiers has been designed, fabricated and characterized.

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M3 - Conference article

AN - SCOPUS:3042743803

SN - 1084-6999

SP - 548

EP - 551

JO - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

JF - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

T2 - 17th IEEE International Conference on Micro Electro Mechanical Systems (MEMS): Maastricht MEMS 2004 Technical Digest

Y2 - 25 January 2004 through 29 January 2004

ER -

Plezoresistive microphone with integrated amplifier realized using metal-induced laterally crystallized polycrystalline silicon

Abstract

ASJC Scopus subject areas

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