Piezoresistive microphone with integrated amplifier realized using metal-induced laterally crystallized polycrystalline silicon

Gang Li; Yitshak Zohar; Man Wong

doi:10.1088/0960-1317/14/10/009

Piezoresistive microphone with integrated amplifier realized using metal-induced laterally crystallized polycrystalline silicon

Gang Li, Yitshak Zohar, Man Wong

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Compared to conventional polycrystalline silicon (poly-Si), high-temperature re-crystallized (RC) metal-induced laterally crystallized (MILC) poly-Si has significantly improved material, mechanical and electrical properties, thus potentially allowing sensor and electronic integration on non-silicon-based substrates. In this paper, a RC-MILC poly-Si piezoresistive microphone with integrated amplifier has been designed, fabricated and tested. Measured results indicate an airborne sound sensitivity of 50 μV Pa ^-1 and a flat frequency response within ±3 dB between 100 Hz and 8 kHz. Using RC-MILC poly-Si, piezoresistors with gauge factor improved about 25%, noise level reduced about 50% and transistors with performance approaching that of single-crystal silicon devices have been realized.

Original language	English (US)
Pages (from-to)	1352-1358
Number of pages	7
Journal	Journal of Micromechanics and Microengineering
Volume	14
Issue number	10
DOIs	https://doi.org/10.1088/0960-1317/14/10/009
State	Published - Oct 1 2004
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0960-1317/14/10/009

Cite this

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title = "Piezoresistive microphone with integrated amplifier realized using metal-induced laterally crystallized polycrystalline silicon",

abstract = "Compared to conventional polycrystalline silicon (poly-Si), high-temperature re-crystallized (RC) metal-induced laterally crystallized (MILC) poly-Si has significantly improved material, mechanical and electrical properties, thus potentially allowing sensor and electronic integration on non-silicon-based substrates. In this paper, a RC-MILC poly-Si piezoresistive microphone with integrated amplifier has been designed, fabricated and tested. Measured results indicate an airborne sound sensitivity of 50 μV Pa -1 and a flat frequency response within ±3 dB between 100 Hz and 8 kHz. Using RC-MILC poly-Si, piezoresistors with gauge factor improved about 25%, noise level reduced about 50% and transistors with performance approaching that of single-crystal silicon devices have been realized.",

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doi = "10.1088/0960-1317/14/10/009",

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T1 - Piezoresistive microphone with integrated amplifier realized using metal-induced laterally crystallized polycrystalline silicon

AU - Li, Gang

AU - Zohar, Yitshak

AU - Wong, Man

PY - 2004/10/1

Y1 - 2004/10/1

N2 - Compared to conventional polycrystalline silicon (poly-Si), high-temperature re-crystallized (RC) metal-induced laterally crystallized (MILC) poly-Si has significantly improved material, mechanical and electrical properties, thus potentially allowing sensor and electronic integration on non-silicon-based substrates. In this paper, a RC-MILC poly-Si piezoresistive microphone with integrated amplifier has been designed, fabricated and tested. Measured results indicate an airborne sound sensitivity of 50 μV Pa -1 and a flat frequency response within ±3 dB between 100 Hz and 8 kHz. Using RC-MILC poly-Si, piezoresistors with gauge factor improved about 25%, noise level reduced about 50% and transistors with performance approaching that of single-crystal silicon devices have been realized.

AB - Compared to conventional polycrystalline silicon (poly-Si), high-temperature re-crystallized (RC) metal-induced laterally crystallized (MILC) poly-Si has significantly improved material, mechanical and electrical properties, thus potentially allowing sensor and electronic integration on non-silicon-based substrates. In this paper, a RC-MILC poly-Si piezoresistive microphone with integrated amplifier has been designed, fabricated and tested. Measured results indicate an airborne sound sensitivity of 50 μV Pa -1 and a flat frequency response within ±3 dB between 100 Hz and 8 kHz. Using RC-MILC poly-Si, piezoresistors with gauge factor improved about 25%, noise level reduced about 50% and transistors with performance approaching that of single-crystal silicon devices have been realized.

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Piezoresistive microphone with integrated amplifier realized using metal-induced laterally crystallized polycrystalline silicon

Abstract

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