Piezoelectric properties of sol-gel derived PZT thin films with various Zr/Ti ratios

G. Teowee; K. C. McCarthy; F. S. McCarthy; D. G. Davis; J. T. Dawley; B. J.J. Zelinski; D. R. Uhlmann

Piezoelectric properties of sol-gel derived PZT thin films with various Zr/Ti ratios

G. Teowee, K. C. McCarthy, F. S. McCarthy, D. G. Davis, J. T. Dawley, B. J.J. Zelinski, D. R. Uhlmann

Research output: Contribution to journal › Conference article › peer-review

Abstract

Piezoelectric thin films are useful for application in microelectromechanical devices. A series of sol-gel derived PZT (lead zirconate titanate) thin films with various Zr/Ti ratios were prepared on platinized substrates. These films were fired to 650C - 700C to crystallize them into single-phase perovskite films, and their piezoelectric properties were measured using optical lever-based instrumentation. Large d₃₃ piezoelectric coefficients up to 400 pm/V were obtained at the morphotropic phase boundary (PZT 53/47), making such films attractive in applications such as thin film transducers, microcantilevers and surface acoustic wave devices.

Original language	English (US)
Pages (from-to)	439-444
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	493
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1997 MRS Fall Symposium - Boston, MA, USA Duration: Nov 30 1997 → Dec 4 1997

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{fd47d8526d3a4074bcd90ae71674bda6,

title = "Piezoelectric properties of sol-gel derived PZT thin films with various Zr/Ti ratios",

abstract = "Piezoelectric thin films are useful for application in microelectromechanical devices. A series of sol-gel derived PZT (lead zirconate titanate) thin films with various Zr/Ti ratios were prepared on platinized substrates. These films were fired to 650C - 700C to crystallize them into single-phase perovskite films, and their piezoelectric properties were measured using optical lever-based instrumentation. Large d33 piezoelectric coefficients up to 400 pm/V were obtained at the morphotropic phase boundary (PZT 53/47), making such films attractive in applications such as thin film transducers, microcantilevers and surface acoustic wave devices.",

author = "G. Teowee and McCarthy, {K. C.} and McCarthy, {F. S.} and Davis, {D. G.} and Dawley, {J. T.} and Zelinski, {B. J.J.} and Uhlmann, {D. R.}",

year = "1998",

language = "English (US)",

volume = "493",

pages = "439--444",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Fall Symposium ; Conference date: 30-11-1997 Through 04-12-1997",

}

TY - JOUR

T1 - Piezoelectric properties of sol-gel derived PZT thin films with various Zr/Ti ratios

AU - Teowee, G.

AU - McCarthy, K. C.

AU - McCarthy, F. S.

AU - Davis, D. G.

AU - Dawley, J. T.

AU - Zelinski, B. J.J.

AU - Uhlmann, D. R.

PY - 1998

Y1 - 1998

N2 - Piezoelectric thin films are useful for application in microelectromechanical devices. A series of sol-gel derived PZT (lead zirconate titanate) thin films with various Zr/Ti ratios were prepared on platinized substrates. These films were fired to 650C - 700C to crystallize them into single-phase perovskite films, and their piezoelectric properties were measured using optical lever-based instrumentation. Large d33 piezoelectric coefficients up to 400 pm/V were obtained at the morphotropic phase boundary (PZT 53/47), making such films attractive in applications such as thin film transducers, microcantilevers and surface acoustic wave devices.

AB - Piezoelectric thin films are useful for application in microelectromechanical devices. A series of sol-gel derived PZT (lead zirconate titanate) thin films with various Zr/Ti ratios were prepared on platinized substrates. These films were fired to 650C - 700C to crystallize them into single-phase perovskite films, and their piezoelectric properties were measured using optical lever-based instrumentation. Large d33 piezoelectric coefficients up to 400 pm/V were obtained at the morphotropic phase boundary (PZT 53/47), making such films attractive in applications such as thin film transducers, microcantilevers and surface acoustic wave devices.

UR - http://www.scopus.com/inward/record.url?scp=0031672835&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031672835&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0031672835

SN - 0272-9172

VL - 493

SP - 439

EP - 444

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Fall Symposium

Y2 - 30 November 1997 through 4 December 1997

ER -

Piezoelectric properties of sol-gel derived PZT thin films with various Zr/Ti ratios

Abstract

ASJC Scopus subject areas

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