Physics of 1.3 μm(GaIn)(NAs)/GaAs semiconductor lasers

M. Hofmann; N. Gerhardt; A. Wagner; W. Stolz; S. W. Koch; W. W. Rühle; J. Hader; J. V. Moloney; H. C. Schneider; W. W. Chow

Physics of 1.3 μm(GaIn)(NAs)/GaAs semiconductor lasers

M. Hofmann, N. Gerhardt, A. Wagner, W. Stolz, S. W. Koch, W. W. Rühle, J. Hader, J. V. Moloney, H. C. Schneider, W. W. Chow

Research output: Contribution to journal › Conference article › peer-review

Abstract

The emission dynamics of 1.3 οm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting lasers (VCSEL) was studied and their optical gain characteristics were investigated. The gain spectra for a ridge-waveguide edge-emitting structure grown by molecular beam epitaxy were observed for the purpose. The experimentally obtained gain spectra were in confirmation with those observed theoretically for elevated carrier densities.

Original language	English (US)
Pages (from-to)	326-327
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	1
State	Published - 2001
Externally published	Yes
Event	14th Annual Meeting of the IEEE Lasers and Electro-Optics Society - San Diego, CA, United States Duration: Nov 11 2001 → Nov 15 2001

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@article{c3aae0a23bd945f88bfd5ac69e84dce8,

title = "Physics of 1.3 μm(GaIn)(NAs)/GaAs semiconductor lasers",

abstract = "The emission dynamics of 1.3 οm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting lasers (VCSEL) was studied and their optical gain characteristics were investigated. The gain spectra for a ridge-waveguide edge-emitting structure grown by molecular beam epitaxy were observed for the purpose. The experimentally obtained gain spectra were in confirmation with those observed theoretically for elevated carrier densities.",

author = "M. Hofmann and N. Gerhardt and A. Wagner and W. Stolz and Koch, {S. W.} and R{\"u}hle, {W. W.} and J. Hader and Moloney, {J. V.} and Schneider, {H. C.} and Chow, {W. W.}",

year = "2001",

language = "English (US)",

volume = "1",

pages = "326--327",

journal = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

issn = "1092-8081",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "14th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; Conference date: 11-11-2001 Through 15-11-2001",

}

TY - JOUR

T1 - Physics of 1.3 μm(GaIn)(NAs)/GaAs semiconductor lasers

AU - Hofmann, M.

AU - Gerhardt, N.

AU - Wagner, A.

AU - Stolz, W.

AU - Koch, S. W.

AU - Rühle, W. W.

AU - Hader, J.

AU - Moloney, J. V.

AU - Schneider, H. C.

AU - Chow, W. W.

PY - 2001

Y1 - 2001

N2 - The emission dynamics of 1.3 οm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting lasers (VCSEL) was studied and their optical gain characteristics were investigated. The gain spectra for a ridge-waveguide edge-emitting structure grown by molecular beam epitaxy were observed for the purpose. The experimentally obtained gain spectra were in confirmation with those observed theoretically for elevated carrier densities.

AB - The emission dynamics of 1.3 οm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting lasers (VCSEL) was studied and their optical gain characteristics were investigated. The gain spectra for a ridge-waveguide edge-emitting structure grown by molecular beam epitaxy were observed for the purpose. The experimentally obtained gain spectra were in confirmation with those observed theoretically for elevated carrier densities.

UR - http://www.scopus.com/inward/record.url?scp=0035656553&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035656553&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035656553

SN - 1092-8081

VL - 1

SP - 326

EP - 327

JO - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

JF - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

T2 - 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society

Y2 - 11 November 2001 through 15 November 2001

ER -

Physics of 1.3 μm(GaIn)(NAs)/GaAs semiconductor lasers

Abstract

ASJC Scopus subject areas

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