Photoresist thermal stability measurements using laser scatterometry

R. A. Norwood; D. R. Holcomb; C. J. Sobodacha; T. J. Lynch

doi:10.1117/12.175389

Photoresist thermal stability measurements using laser scatterometry

R. A. Norwood, D. R. Holcomb, C. J. Sobodacha, T. J. Lynch

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Thermal stability of photoresists has been measured using laser scatterometry. This new laser scatterometry technique is more rapid and more sensitive than scanning electron microscopy (SEM) methods. Patterned resists are slowly heated while various diffraction order intensities are measured. Changes in the diffraction intensities correlate well with thermal stabilities measured by SEM methods.

Original language	English (US)
Title of host publication	Advances in Resist Technology and Processing XI
Editors	Omkaram Nalamasu
Publisher	SPIE
Pages	765-773
Number of pages	9
ISBN (Electronic)	9780819414908
DOIs	https://doi.org/10.1117/12.175389
State	Published - May 16 1994
Externally published	Yes
Event	Advances in Resist Technology and Processing XI 1994 - San Jose, United States Duration: Feb 27 1994 → Mar 4 1994

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2195
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Other

Other	Advances in Resist Technology and Processing XI 1994
Country/Territory	United States
City	San Jose
Period	2/27/94 → 3/4/94

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.175389

Cite this

Photoresist thermal stability measurements using laser scatterometry. / Norwood, R. A.; Holcomb, D. R.; Sobodacha, C. J. et al.
Advances in Resist Technology and Processing XI. ed. / Omkaram Nalamasu. SPIE, 1994. p. 765-773 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 2195).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Norwood, RA, Holcomb, DR, Sobodacha, CJ & Lynch, TJ 1994, Photoresist thermal stability measurements using laser scatterometry. in O Nalamasu (ed.), Advances in Resist Technology and Processing XI. Proceedings of SPIE - The International Society for Optical Engineering, vol. 2195, SPIE, pp. 765-773, Advances in Resist Technology and Processing XI 1994, San Jose, United States, 2/27/94. https://doi.org/10.1117/12.175389

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AB - Thermal stability of photoresists has been measured using laser scatterometry. This new laser scatterometry technique is more rapid and more sensitive than scanning electron microscopy (SEM) methods. Patterned resists are slowly heated while various diffraction order intensities are measured. Changes in the diffraction intensities correlate well with thermal stabilities measured by SEM methods.

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Photoresist thermal stability measurements using laser scatterometry

Abstract

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