Photoresist thermal stability measurements using laser scatterometry

R. A. Norwood, D. R. Holcomb, C. J. Sobodacha, T. J. Lynch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Thermal stability of photoresists has been measured using laser scatterometry. This new laser scatterometry technique is more rapid and more sensitive than scanning electron microscopy (SEM) methods. Patterned resists are slowly heated while various diffraction order intensities are measured. Changes in the diffraction intensities correlate well with thermal stabilities measured by SEM methods.

Original languageEnglish (US)
Title of host publicationAdvances in Resist Technology and Processing XI
EditorsOmkaram Nalamasu
Number of pages9
ISBN (Electronic)9780819414908
StatePublished - May 16 1994
EventAdvances in Resist Technology and Processing XI 1994 - San Jose, United States
Duration: Feb 27 1994Mar 4 1994

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


OtherAdvances in Resist Technology and Processing XI 1994
Country/TerritoryUnited States
CitySan Jose

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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