Photo-induced and electrooptic properties of (PB,LA)(ZR,TI)O3 films for optical memories

D. Dimos; B. G. Potter; M. B. Sinclair; B. A. Tuttle; W. L. Warren

doi:10.1080/10584589408018679

Photo-induced and electrooptic properties of (PB,LA)(ZR,TI)O₃ films for optical memories

D. Dimos, B. G. Potter, M. B. Sinclair, B. A. Tuttle, W. L. Warren

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Photo-induced hysteresis changes and electrooptic effects in sol-gel Pb(Zr,Ti)O3 (PZT) and (Pb,La)(Zr,Ti)O3 (PLZT) films have been studied in an effort to evaluate these materials for optical memory applications. The films exhibit two distinct, but related, types of photoinduced changes in their hysteresis behavior: 1) a photoinduced change in the coercive voltage and 2) a photoinduced suppression of the switchable polarization. Both types of photoinduced hysteresis changes are due to trapping of photo-generated charge carriers at sites which minimize internal depolarizing fields. The photoinduced changes are reproducible and stable and are, thus, suitable for optical memory applications. In addition, polarization-dependent changes in the refractive indices can be the basis of a nondestructive optical readout technique. To characterize these electrooptic effects, a waveguide refractometry technique has been used to independently determine field-induced changes in the ordinary and extraordinary indices. For an applied field sufficient to saturate the ferroelectric polarization (E = 125 kV/cm), the ratio of the extraordinary to ordinary index change (Δn,/Δn.) of a Pb(Zr0.53Ti0.47)O3 film was found to be -4/1, leading to a net birefringence change [Δ(n - nΔ] of -0.21.

Original language	English (US)
Pages (from-to)	47-58
Number of pages	12
Journal	Integrated Ferroelectrics
Volume	5
Issue number	1
DOIs	https://doi.org/10.1080/10584589408018679
State	Published - Sep 1 1994
Externally published	Yes

Keywords

Ferroelectric films
electrooptic
optical memory
photoferroelectric

ASJC Scopus subject areas

Control and Systems Engineering
Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1080/10584589408018679

Cite this

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title = "Photo-induced and electrooptic properties of (PB,LA)(ZR,TI)O3 films for optical memories",

abstract = "Photo-induced hysteresis changes and electrooptic effects in sol-gel Pb(Zr,Ti)O3 (PZT) and (Pb,La)(Zr,Ti)O3 (PLZT) films have been studied in an effort to evaluate these materials for optical memory applications. The films exhibit two distinct, but related, types of photoinduced changes in their hysteresis behavior: 1) a photoinduced change in the coercive voltage and 2) a photoinduced suppression of the switchable polarization. Both types of photoinduced hysteresis changes are due to trapping of photo-generated charge carriers at sites which minimize internal depolarizing fields. The photoinduced changes are reproducible and stable and are, thus, suitable for optical memory applications. In addition, polarization-dependent changes in the refractive indices can be the basis of a nondestructive optical readout technique. To characterize these electrooptic effects, a waveguide refractometry technique has been used to independently determine field-induced changes in the ordinary and extraordinary indices. For an applied field sufficient to saturate the ferroelectric polarization (E = 125 kV/cm), the ratio of the extraordinary to ordinary index change (Δn,/Δn.) of a Pb(Zr0.53Ti0.47)O3 film was found to be -4/1, leading to a net birefringence change [Δ(n - nΔ] of -0.21.",

keywords = "Ferroelectric films, electrooptic, optical memory, photoferroelectric",

author = "D. Dimos and Potter, {B. G.} and Sinclair, {M. B.} and Tuttle, {B. A.} and Warren, {W. L.}",

note = "Funding Information: This work was supported by the Office of Naval Research and the U S . Department of Energy under contract DE-ACU4-76DP00789.T he authors would like to acknowledge C. H. Seager, R. W. Schwartz, and J. A Bullington for helpful discussions and thank D. Goodnow and J. Kubas for technical assistance.",

year = "1994",

month = sep,

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doi = "10.1080/10584589408018679",

language = "English (US)",

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T1 - Photo-induced and electrooptic properties of (PB,LA)(ZR,TI)O3 films for optical memories

AU - Dimos, D.

AU - Potter, B. G.

AU - Sinclair, M. B.

AU - Tuttle, B. A.

AU - Warren, W. L.

N1 - Funding Information: This work was supported by the Office of Naval Research and the U S . Department of Energy under contract DE-ACU4-76DP00789.T he authors would like to acknowledge C. H. Seager, R. W. Schwartz, and J. A Bullington for helpful discussions and thank D. Goodnow and J. Kubas for technical assistance.

PY - 1994/9/1

Y1 - 1994/9/1

N2 - Photo-induced hysteresis changes and electrooptic effects in sol-gel Pb(Zr,Ti)O3 (PZT) and (Pb,La)(Zr,Ti)O3 (PLZT) films have been studied in an effort to evaluate these materials for optical memory applications. The films exhibit two distinct, but related, types of photoinduced changes in their hysteresis behavior: 1) a photoinduced change in the coercive voltage and 2) a photoinduced suppression of the switchable polarization. Both types of photoinduced hysteresis changes are due to trapping of photo-generated charge carriers at sites which minimize internal depolarizing fields. The photoinduced changes are reproducible and stable and are, thus, suitable for optical memory applications. In addition, polarization-dependent changes in the refractive indices can be the basis of a nondestructive optical readout technique. To characterize these electrooptic effects, a waveguide refractometry technique has been used to independently determine field-induced changes in the ordinary and extraordinary indices. For an applied field sufficient to saturate the ferroelectric polarization (E = 125 kV/cm), the ratio of the extraordinary to ordinary index change (Δn,/Δn.) of a Pb(Zr0.53Ti0.47)O3 film was found to be -4/1, leading to a net birefringence change [Δ(n - nΔ] of -0.21.

AB - Photo-induced hysteresis changes and electrooptic effects in sol-gel Pb(Zr,Ti)O3 (PZT) and (Pb,La)(Zr,Ti)O3 (PLZT) films have been studied in an effort to evaluate these materials for optical memory applications. The films exhibit two distinct, but related, types of photoinduced changes in their hysteresis behavior: 1) a photoinduced change in the coercive voltage and 2) a photoinduced suppression of the switchable polarization. Both types of photoinduced hysteresis changes are due to trapping of photo-generated charge carriers at sites which minimize internal depolarizing fields. The photoinduced changes are reproducible and stable and are, thus, suitable for optical memory applications. In addition, polarization-dependent changes in the refractive indices can be the basis of a nondestructive optical readout technique. To characterize these electrooptic effects, a waveguide refractometry technique has been used to independently determine field-induced changes in the ordinary and extraordinary indices. For an applied field sufficient to saturate the ferroelectric polarization (E = 125 kV/cm), the ratio of the extraordinary to ordinary index change (Δn,/Δn.) of a Pb(Zr0.53Ti0.47)O3 film was found to be -4/1, leading to a net birefringence change [Δ(n - nΔ] of -0.21.

KW - Ferroelectric films

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