Abstract
Spectral-hole-burning experiments are performed in the gain region of an inverted semiconductor multiple quantum well. We find not only a spectral hole at the pump-pulse frequency but also replicas at higher frequencies. These replicas are qualitatively explained in terms of carrier-phonon interactions in which high-energy carriers relax into the optically induced spectral hole by LO-phonon emission.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1298-1301 |
| Number of pages | 4 |
| Journal | Journal of the Optical Society of America B: Optical Physics |
| Volume | 13 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jun 1996 |
ASJC Scopus subject areas
- Statistical and Nonlinear Physics
- Atomic and Molecular Physics, and Optics
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