Phonon emission by nonequilibrium carriers in the gain region of an inverted semiconductor

G. Mohs; R. Binder; B. Fluegel; H. Giessen; N. Peyghambarian

Phonon emission by nonequilibrium carriers in the gain region of an inverted semiconductor

G. Mohs
, R. Binder
, B. Fluegel
, H. Giessen
, N. Peyghambarian

Research output: Contribution to conference › Paper › peer-review

Abstract

Carrier relaxation dynamics in the gain region of semiconductors are of interest not only from a fundamental point of view but also with respect to the basic limits of semiconductor lasers and optical amplifiers. Of particular importance are relaxation effects resulting from carrier-phonon scattering. This paper focus on the emission of LO-phonons by charge-carriers in a nonequilibrium distribution. The nonequilibrium distribution is generated in a cool electron hole plasma by spectral hole burning.

Original language	English (US)
Pages	158-159
Number of pages	2
State	Published - 1996
Event	Proceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS - Anaheim, CA, USA Duration: Jun 2 1996 → Jun 7 1996

Other

Other	Proceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS
City	Anaheim, CA, USA
Period	6/2/96 → 6/7/96

ASJC Scopus subject areas

General Physics and Astronomy

Cite this

@conference{cb44b15a47204737898d6cbc87b01215,

title = "Phonon emission by nonequilibrium carriers in the gain region of an inverted semiconductor",

abstract = "Carrier relaxation dynamics in the gain region of semiconductors are of interest not only from a fundamental point of view but also with respect to the basic limits of semiconductor lasers and optical amplifiers. Of particular importance are relaxation effects resulting from carrier-phonon scattering. This paper focus on the emission of LO-phonons by charge-carriers in a nonequilibrium distribution. The nonequilibrium distribution is generated in a cool electron hole plasma by spectral hole burning.",

author = "G. Mohs and R. Binder and B. Fluegel and H. Giessen and N. Peyghambarian",

year = "1996",

language = "English (US)",

pages = "158--159",

note = "Proceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS ; Conference date: 02-06-1996 Through 07-06-1996",

}

TY - CONF

T1 - Phonon emission by nonequilibrium carriers in the gain region of an inverted semiconductor

AU - Mohs, G.

AU - Binder, R.

AU - Fluegel, B.

AU - Giessen, H.

AU - Peyghambarian, N.

PY - 1996

Y1 - 1996

N2 - Carrier relaxation dynamics in the gain region of semiconductors are of interest not only from a fundamental point of view but also with respect to the basic limits of semiconductor lasers and optical amplifiers. Of particular importance are relaxation effects resulting from carrier-phonon scattering. This paper focus on the emission of LO-phonons by charge-carriers in a nonequilibrium distribution. The nonequilibrium distribution is generated in a cool electron hole plasma by spectral hole burning.

AB - Carrier relaxation dynamics in the gain region of semiconductors are of interest not only from a fundamental point of view but also with respect to the basic limits of semiconductor lasers and optical amplifiers. Of particular importance are relaxation effects resulting from carrier-phonon scattering. This paper focus on the emission of LO-phonons by charge-carriers in a nonequilibrium distribution. The nonequilibrium distribution is generated in a cool electron hole plasma by spectral hole burning.

UR - https://www.scopus.com/pages/publications/0029717634

UR - https://www.scopus.com/pages/publications/0029717634#tab=citedBy

M3 - Paper

AN - SCOPUS:0029717634

SP - 158

EP - 159

T2 - Proceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS

Y2 - 2 June 1996 through 7 June 1996

ER -

Phonon emission by nonequilibrium carriers in the gain region of an inverted semiconductor

Abstract

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ASJC Scopus subject areas

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