Abstract
Carrier relaxation dynamics in the gain region of semiconductors are of interest not only from a fundamental point of view but also with respect to the basic limits of semiconductor lasers and optical amplifiers. Of particular importance are relaxation effects resulting from carrier-phonon scattering. This paper focus on the emission of LO-phonons by charge-carriers in a nonequilibrium distribution. The nonequilibrium distribution is generated in a cool electron hole plasma by spectral hole burning.
| Original language | English (US) |
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| Pages | 158-159 |
| Number of pages | 2 |
| State | Published - 1996 |
| Event | Proceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS - Anaheim, CA, USA Duration: Jun 2 1996 → Jun 7 1996 |
Other
| Other | Proceedings of the 1996 6th Quantum Electronics and Laser Science Conference, QELS |
|---|---|
| City | Anaheim, CA, USA |
| Period | 6/2/96 → 6/7/96 |
ASJC Scopus subject areas
- Physics and Astronomy(all)