TY - GEN
T1 - Performance of a novel slurry injection system on an ebara F-REX200® polisher for a silicon dioxide CMP application
AU - Borucki, Leonard
AU - Zhuang, Yun
AU - Sampurno, Yasa
AU - Philipossian, Ara
AU - Kreutzer-Schneeweiss, Sascha
N1 - Funding Information:
The authors would like to thank Ebara Precision Machinery Europe GmbH for their generous support of this work.
Publisher Copyright:
© ICPT 2012 - International Conference on Planarization/CMP Technology, Proceedings. All rights reserved.
PY - 2012
Y1 - 2012
N2 - We describe a new type of slurry injection system (SIS-100) along with data on removal rate, non-uniformity, wafer-level defects, and slurry savings obtained on an Ebara FREX200® polisher using SS25™ slurry on both k-groove and XY-perforated IC1000™ pads. The system tested is installed in parallel with the standard slurry applicator using existing polisher hardware and does not require power, software, or any process changes except for flow rate. The injector contacts the pad with a light load and applies slurry in a thin layer at the device trailing edge using single or multiple injection points. Used slurry, rinse water and pad debris are then removed from the pad by the leading edge. At each flow rate, the removal rate is enhanced sufficiently over the rate from the standard slurry applicator that the flow rate can be reduced by about 30% on the XY-perforated pad and 50% on the k-groove pad without sacrificing removal rate. Non-uniformity is found to be unchanged and defect levels are found to be the same or better compared with the standard applicator.
AB - We describe a new type of slurry injection system (SIS-100) along with data on removal rate, non-uniformity, wafer-level defects, and slurry savings obtained on an Ebara FREX200® polisher using SS25™ slurry on both k-groove and XY-perforated IC1000™ pads. The system tested is installed in parallel with the standard slurry applicator using existing polisher hardware and does not require power, software, or any process changes except for flow rate. The injector contacts the pad with a light load and applies slurry in a thin layer at the device trailing edge using single or multiple injection points. Used slurry, rinse water and pad debris are then removed from the pad by the leading edge. At each flow rate, the removal rate is enhanced sufficiently over the rate from the standard slurry applicator that the flow rate can be reduced by about 30% on the XY-perforated pad and 50% on the k-groove pad without sacrificing removal rate. Non-uniformity is found to be unchanged and defect levels are found to be the same or better compared with the standard applicator.
KW - Chemical-mechanical Polishing
KW - Defects
KW - F-REX200®
KW - Slurry Application
KW - Slurry Reduction
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M3 - Conference contribution
AN - SCOPUS:84930161920
T3 - ICPT 2012 - International Conference on Planarization/CMP Technology, Proceedings
SP - 35
EP - 40
BT - ICPT 2012 - International Conference on Planarization/CMP Technology, Proceedings
PB - VDE Verlag GmbH
T2 - 2012 International Conference on Planarization/CMP Technology, ICPT 2012
Y2 - 15 October 2012 through 17 October 2012
ER -