Performance improvement of circular-grating surface-emittingDBR lasers using an MQW structure with etch-stop layer

  • M. Fallahi
  • , M. Dion
  • , Z. Wasilewski
  • , M. Buchanan
  • , M. Nournia
  • , J. Stapledon
  • , R. Barber

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

The authors demonstrate low threshold current high efficiency operation of circular-grating surface-emitting distributed Bragg reflector (CG-SE-DBR) lasers. A strained InGaAsIGaAs triple quantum well with an etch-stop layer was grown by MBE. Circular gratings are defined by electron beam lithography. A threshold current as low as 17mA and a pulsed output power > 170mW at ~980nm wavelength are obtained.

Original languageEnglish (US)
Pages (from-to)1581-1582
Number of pages2
JournalElectronics Letters
Volume31
Issue number18
DOIs
StatePublished - Aug 31 1995
Externally publishedYes

Keywords

  • Distributed Bragg reflector lasers
  • Vertical cavity surface emitting lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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