Performance improvement of circular-grating surface-emittingDBR lasers using an MQW structure with etch-stop layer

M. Fallahi; M. Dion; Z. Wasilewski; M. Buchanan; M. Nournia; J. Stapledon; R. Barber

doi:10.1049/el:19951045

Performance improvement of circular-grating surface-emittingDBR lasers using an MQW structure with etch-stop layer

M. Fallahi, M. Dion, Z. Wasilewski, M. Buchanan, M. Nournia, J. Stapledon, R. Barber

Optical Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

The authors demonstrate low threshold current high efficiency operation of circular-grating surface-emitting distributed Bragg reflector (CG-SE-DBR) lasers. A strained InGaAsIGaAs triple quantum well with an etch-stop layer was grown by MBE. Circular gratings are defined by electron beam lithography. A threshold current as low as 17mA and a pulsed output power > 170mW at ~980nm wavelength are obtained.

Original language	English (US)
Pages (from-to)	1581-1582
Number of pages	2
Journal	Electronics Letters
Volume	31
Issue number	18
DOIs	https://doi.org/10.1049/el:19951045
State	Published - Aug 31 1995

Keywords

Distributed Bragg reflector lasers
Vertical cavity surface emitting lasers

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19951045

Cite this

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title = "Performance improvement of circular-grating surface-emittingDBR lasers using an MQW structure with etch-stop layer",

abstract = "The authors demonstrate low threshold current high efficiency operation of circular-grating surface-emitting distributed Bragg reflector (CG-SE-DBR) lasers. A strained InGaAsIGaAs triple quantum well with an etch-stop layer was grown by MBE. Circular gratings are defined by electron beam lithography. A threshold current as low as 17mA and a pulsed output power > 170mW at ~980nm wavelength are obtained.",

keywords = "Distributed Bragg reflector lasers, Vertical cavity surface emitting lasers",

author = "M. Fallahi and M. Dion and Z. Wasilewski and M. Buchanan and M. Nournia and J. Stapledon and R. Barber",

year = "1995",

month = aug,

day = "31",

doi = "10.1049/el:19951045",

language = "English (US)",

volume = "31",

pages = "1581--1582",

journal = "Electronics Letters",

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publisher = "Institution of Engineering and Technology",

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T1 - Performance improvement of circular-grating surface-emittingDBR lasers using an MQW structure with etch-stop layer

AU - Fallahi, M.

AU - Dion, M.

AU - Wasilewski, Z.

AU - Buchanan, M.

AU - Nournia, M.

AU - Stapledon, J.

AU - Barber, R.

PY - 1995/8/31

Y1 - 1995/8/31

N2 - The authors demonstrate low threshold current high efficiency operation of circular-grating surface-emitting distributed Bragg reflector (CG-SE-DBR) lasers. A strained InGaAsIGaAs triple quantum well with an etch-stop layer was grown by MBE. Circular gratings are defined by electron beam lithography. A threshold current as low as 17mA and a pulsed output power > 170mW at ~980nm wavelength are obtained.

AB - The authors demonstrate low threshold current high efficiency operation of circular-grating surface-emitting distributed Bragg reflector (CG-SE-DBR) lasers. A strained InGaAsIGaAs triple quantum well with an etch-stop layer was grown by MBE. Circular gratings are defined by electron beam lithography. A threshold current as low as 17mA and a pulsed output power > 170mW at ~980nm wavelength are obtained.

KW - Distributed Bragg reflector lasers

KW - Vertical cavity surface emitting lasers

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DO - 10.1049/el:19951045

M3 - Article

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VL - 31

SP - 1581

EP - 1582

JO - Electronics Letters

JF - Electronics Letters

IS - 18

ER -

Performance improvement of circular-grating surface-emittingDBR lasers using an MQW structure with etch-stop layer

Abstract

Keywords

ASJC Scopus subject areas

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