Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions

Larysa Tryputen, Kun Hua Tu, Stephan K. Piotrowski, Mukund Bapna, Sara A. Majetich, Congli Sun, Paul M. Voyles, Hamid Almasi, Weigang Wang, Patricio Vargas, Jason S. Tresback, Caroline A. Ross

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Perpendicular magnetic tunnel junctions (p-MTJs) were patterned into nanopillars using electron-beam lithography to study their scaling and switching behaviour. Magnetoresistance measurements of annealed and unannealed p-MTJ films using scanning probe microscopy showed good agreement with Monte Carlo modeling. p-MTJ pillars demonstrated clear parallel magnetic states, both 'up' or both 'down' following AC-demagnetization. Significant variability in the resistance of p-MTJ pillars was observed and attributed to edge features generated during patterning or local inhomogeneity in the MgO layer.

Original languageEnglish (US)
Article number185302
Issue number18
StatePublished - Mar 23 2016


  • magnetoresistance
  • metal nanopillars
  • nanofabrication
  • perpendicular magnetic tunnel junctions
  • spintronics

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering


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