Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions

Larysa Tryputen; Kun Hua Tu; Stephan K. Piotrowski; Mukund Bapna; Sara A. Majetich; Congli Sun; Paul M. Voyles; Hamid Almasi; Weigang Wang; Patricio Vargas; Jason S. Tresback; Caroline A. Ross

doi:10.1088/0957-4484/27/18/185302

Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions

Larysa Tryputen, Kun Hua Tu, Stephan K. Piotrowski, Mukund Bapna, Sara A. Majetich, Congli Sun, Paul M. Voyles, Hamid Almasi, Weigang Wang, Patricio Vargas, Jason S. Tresback, Caroline A. Ross

Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Perpendicular magnetic tunnel junctions (p-MTJs) were patterned into nanopillars using electron-beam lithography to study their scaling and switching behaviour. Magnetoresistance measurements of annealed and unannealed p-MTJ films using scanning probe microscopy showed good agreement with Monte Carlo modeling. p-MTJ pillars demonstrated clear parallel magnetic states, both 'up' or both 'down' following AC-demagnetization. Significant variability in the resistance of p-MTJ pillars was observed and attributed to edge features generated during patterning or local inhomogeneity in the MgO layer.

Original language	English (US)
Article number	185302
Journal	Nanotechnology
Volume	27
Issue number	18
DOIs	https://doi.org/10.1088/0957-4484/27/18/185302
State	Published - Mar 23 2016

Keywords

magnetoresistance
metal nanopillars
nanofabrication
perpendicular magnetic tunnel junctions
spintronics

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Mechanics of Materials
Mechanical Engineering
Electrical and Electronic Engineering

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10.1088/0957-4484/27/18/185302

Cite this

@article{171eb846b09f4514a36edef8bde90d04,

title = "Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions",

abstract = "Perpendicular magnetic tunnel junctions (p-MTJs) were patterned into nanopillars using electron-beam lithography to study their scaling and switching behaviour. Magnetoresistance measurements of annealed and unannealed p-MTJ films using scanning probe microscopy showed good agreement with Monte Carlo modeling. p-MTJ pillars demonstrated clear parallel magnetic states, both 'up' or both 'down' following AC-demagnetization. Significant variability in the resistance of p-MTJ pillars was observed and attributed to edge features generated during patterning or local inhomogeneity in the MgO layer.",

keywords = "magnetoresistance, metal nanopillars, nanofabrication, perpendicular magnetic tunnel junctions, spintronics",

author = "Larysa Tryputen and Tu, {Kun Hua} and Piotrowski, {Stephan K.} and Mukund Bapna and Majetich, {Sara A.} and Congli Sun and Voyles, {Paul M.} and Hamid Almasi and Weigang Wang and Patricio Vargas and Tresback, {Jason S.} and Ross, {Caroline A.}",

note = "Publisher Copyright: {\textcopyright} 2016 IOP Publishing Ltd.",

year = "2016",

month = mar,

day = "23",

doi = "10.1088/0957-4484/27/18/185302",

language = "English (US)",

volume = "27",

journal = "Nanotechnology",

issn = "0957-4484",

publisher = "IOP Publishing Ltd.",

number = "18",

}

TY - JOUR

T1 - Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions

AU - Tryputen, Larysa

AU - Tu, Kun Hua

AU - Piotrowski, Stephan K.

AU - Bapna, Mukund

AU - Majetich, Sara A.

AU - Sun, Congli

AU - Voyles, Paul M.

AU - Almasi, Hamid

AU - Wang, Weigang

AU - Vargas, Patricio

AU - Tresback, Jason S.

AU - Ross, Caroline A.

PY - 2016/3/23

Y1 - 2016/3/23

N2 - Perpendicular magnetic tunnel junctions (p-MTJs) were patterned into nanopillars using electron-beam lithography to study their scaling and switching behaviour. Magnetoresistance measurements of annealed and unannealed p-MTJ films using scanning probe microscopy showed good agreement with Monte Carlo modeling. p-MTJ pillars demonstrated clear parallel magnetic states, both 'up' or both 'down' following AC-demagnetization. Significant variability in the resistance of p-MTJ pillars was observed and attributed to edge features generated during patterning or local inhomogeneity in the MgO layer.

AB - Perpendicular magnetic tunnel junctions (p-MTJs) were patterned into nanopillars using electron-beam lithography to study their scaling and switching behaviour. Magnetoresistance measurements of annealed and unannealed p-MTJ films using scanning probe microscopy showed good agreement with Monte Carlo modeling. p-MTJ pillars demonstrated clear parallel magnetic states, both 'up' or both 'down' following AC-demagnetization. Significant variability in the resistance of p-MTJ pillars was observed and attributed to edge features generated during patterning or local inhomogeneity in the MgO layer.

KW - magnetoresistance

KW - metal nanopillars

KW - nanofabrication

KW - perpendicular magnetic tunnel junctions

KW - spintronics

UR - http://www.scopus.com/inward/record.url?scp=84962275316&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84962275316&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/27/18/185302

DO - 10.1088/0957-4484/27/18/185302

M3 - Article

AN - SCOPUS:84962275316

SN - 0957-4484

VL - 27

JO - Nanotechnology

JF - Nanotechnology

IS - 18

M1 - 185302

ER -

Patterning of sub-50 nm perpendicular CoFeB/MgO-based magnetic tunnel junctions

Abstract

Keywords

ASJC Scopus subject areas

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