Passivation of pinhole defect microelectrode arrays in ultrathin silica films immobilized on gold substrates

Piotr Macech; Jeanne E. Pemberton

doi:10.1016/j.tsf.2009.01.057

Passivation of pinhole defect microelectrode arrays in ultrathin silica films immobilized on gold substrates

Piotr Macech
, Jeanne E. Pemberton

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Nanoscopic defects present in ultrathin (~ 6 nm) silica films covalently attached to gold substrates through a gold oxide layer exhibit a voltammetric response consistent with a random array of ultramicroelectrodes. These pinholes can be passivated via electrochemical polymerization of phenol to create insulating poly(phenylene) oxide plugs as documented by atomic force microscopy and infrared reflectance-absorbance spectroscopy. Passivation of pinholes is ~ 99.5% complete after 550 voltammetric cycles of oxidative electropolymerization.

Original language	English (US)
Pages (from-to)	5399-5403
Number of pages	5
Journal	Thin Solid Films
Volume	517
Issue number	18
DOIs	https://doi.org/10.1016/j.tsf.2009.01.057
State	Published - Jul 31 2009

Keywords

Atomic force microscopy
Electropolymerization
Fourier transform infrared spectroscopy
Insulating overlayer
Microelectrode array
Pinhole defect
Poly(phenylene) oxide
Silica

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2009.01.057

Cite this

@article{41c57556a98f469f87c779c73cae7416,

title = "Passivation of pinhole defect microelectrode arrays in ultrathin silica films immobilized on gold substrates",

abstract = "Nanoscopic defects present in ultrathin (\textasciitilde{} 6 nm) silica films covalently attached to gold substrates through a gold oxide layer exhibit a voltammetric response consistent with a random array of ultramicroelectrodes. These pinholes can be passivated via electrochemical polymerization of phenol to create insulating poly(phenylene) oxide plugs as documented by atomic force microscopy and infrared reflectance-absorbance spectroscopy. Passivation of pinholes is \textasciitilde{} 99.5\% complete after 550 voltammetric cycles of oxidative electropolymerization.",

keywords = "Atomic force microscopy, Electropolymerization, Fourier transform infrared spectroscopy, Insulating overlayer, Microelectrode array, Pinhole defect, Poly(phenylene) oxide, Silica",

author = "Piotr Macech and Pemberton, \{Jeanne E.\}",

note = "Funding Information: The authors are grateful for the support of this research by the Department of Energy and for support for instrumentation for surface characterization by the National Science Foundation. The authors also gratefully acknowledge Agilent Technologies for providing the conductive AFM images described herein.",

year = "2009",

month = jul,

day = "31",

doi = "10.1016/j.tsf.2009.01.057",

language = "English (US)",

volume = "517",

pages = "5399--5403",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "18",

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TY - JOUR

T1 - Passivation of pinhole defect microelectrode arrays in ultrathin silica films immobilized on gold substrates

AU - Macech, Piotr

AU - Pemberton, Jeanne E.

N1 - Funding Information: The authors are grateful for the support of this research by the Department of Energy and for support for instrumentation for surface characterization by the National Science Foundation. The authors also gratefully acknowledge Agilent Technologies for providing the conductive AFM images described herein.

PY - 2009/7/31

Y1 - 2009/7/31

N2 - Nanoscopic defects present in ultrathin (~ 6 nm) silica films covalently attached to gold substrates through a gold oxide layer exhibit a voltammetric response consistent with a random array of ultramicroelectrodes. These pinholes can be passivated via electrochemical polymerization of phenol to create insulating poly(phenylene) oxide plugs as documented by atomic force microscopy and infrared reflectance-absorbance spectroscopy. Passivation of pinholes is ~ 99.5% complete after 550 voltammetric cycles of oxidative electropolymerization.

AB - Nanoscopic defects present in ultrathin (~ 6 nm) silica films covalently attached to gold substrates through a gold oxide layer exhibit a voltammetric response consistent with a random array of ultramicroelectrodes. These pinholes can be passivated via electrochemical polymerization of phenol to create insulating poly(phenylene) oxide plugs as documented by atomic force microscopy and infrared reflectance-absorbance spectroscopy. Passivation of pinholes is ~ 99.5% complete after 550 voltammetric cycles of oxidative electropolymerization.

KW - Atomic force microscopy

KW - Electropolymerization

KW - Fourier transform infrared spectroscopy

KW - Insulating overlayer

KW - Microelectrode array

KW - Pinhole defect

KW - Poly(phenylene) oxide

KW - Silica

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UR - https://www.scopus.com/pages/publications/65649090231#tab=citedBy

U2 - 10.1016/j.tsf.2009.01.057

DO - 10.1016/j.tsf.2009.01.057

M3 - Article

AN - SCOPUS:65649090231

SN - 0040-6090

VL - 517

SP - 5399

EP - 5403

JO - Thin Solid Films

JF - Thin Solid Films

IS - 18

ER -

Passivation of pinhole defect microelectrode arrays in ultrathin silica films immobilized on gold substrates

Abstract

Keywords

ASJC Scopus subject areas

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