Pad topography, contact area and hydrodynamic lubrication in chemical-mechanical polishing

Leonard J. Borucki; Ting Sun; Yun Zhuang; David Slutz; Ara Philipossian

Pad topography, contact area and hydrodynamic lubrication in chemical-mechanical polishing

Leonard J. Borucki, Ting Sun, Yun Zhuang, David Slutz, Ara Philipossian

Chemical and Environmental Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Material removal during CMP occurs by the activation of slurry particles at contact points between pad summits and the wafer. When slurry is present and the wafer is sliding, contacts become lubricated. We present an analysis valid over the fill range from static contact to hydroplaning that indicates that CMP usually operates in boundary or mixed lubrication mode at contacts and that the lubrication layer is nanometers thick. The results suggest that the sliding solid contact area is mainly responsible for the friction coefficient while both the solid contact and lubricated areas control the removal rate.

Original language	English (US)
Title of host publication	Science and Technology of Chemical Mechanical Planarization (CMP)
Pages	9-14
Number of pages	6
State	Published - 2010
Event	2009 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 14 2009 → Apr 17 2009

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1157
ISSN (Print)	0272-9172

Other

Other	2009 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	4/14/09 → 4/17/09

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Pad topography, contact area and hydrodynamic lubrication in chemical-mechanical polishing. / Borucki, Leonard J.; Sun, Ting; Zhuang, Yun et al.
Science and Technology of Chemical Mechanical Planarization (CMP). 2010. p. 9-14 (Materials Research Society Symposium Proceedings; Vol. 1157).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

@inproceedings{31a4cf17cf22459a8ebeee54faa4f5cb,

title = "Pad topography, contact area and hydrodynamic lubrication in chemical-mechanical polishing",

abstract = "Material removal during CMP occurs by the activation of slurry particles at contact points between pad summits and the wafer. When slurry is present and the wafer is sliding, contacts become lubricated. We present an analysis valid over the fill range from static contact to hydroplaning that indicates that CMP usually operates in boundary or mixed lubrication mode at contacts and that the lubrication layer is nanometers thick. The results suggest that the sliding solid contact area is mainly responsible for the friction coefficient while both the solid contact and lubricated areas control the removal rate.",

author = "Borucki, {Leonard J.} and Ting Sun and Yun Zhuang and David Slutz and Ara Philipossian",

year = "2010",

language = "English (US)",

isbn = "9781605111308",

series = "Materials Research Society Symposium Proceedings",

pages = "9--14",

booktitle = "Science and Technology of Chemical Mechanical Planarization (CMP)",

note = "2009 MRS Spring Meeting ; Conference date: 14-04-2009 Through 17-04-2009",

}

TY - GEN

T1 - Pad topography, contact area and hydrodynamic lubrication in chemical-mechanical polishing

AU - Borucki, Leonard J.

AU - Sun, Ting

AU - Zhuang, Yun

AU - Slutz, David

AU - Philipossian, Ara

PY - 2010

Y1 - 2010

N2 - Material removal during CMP occurs by the activation of slurry particles at contact points between pad summits and the wafer. When slurry is present and the wafer is sliding, contacts become lubricated. We present an analysis valid over the fill range from static contact to hydroplaning that indicates that CMP usually operates in boundary or mixed lubrication mode at contacts and that the lubrication layer is nanometers thick. The results suggest that the sliding solid contact area is mainly responsible for the friction coefficient while both the solid contact and lubricated areas control the removal rate.

AB - Material removal during CMP occurs by the activation of slurry particles at contact points between pad summits and the wafer. When slurry is present and the wafer is sliding, contacts become lubricated. We present an analysis valid over the fill range from static contact to hydroplaning that indicates that CMP usually operates in boundary or mixed lubrication mode at contacts and that the lubrication layer is nanometers thick. The results suggest that the sliding solid contact area is mainly responsible for the friction coefficient while both the solid contact and lubricated areas control the removal rate.

UR - http://www.scopus.com/inward/record.url?scp=77953997500&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77953997500&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:77953997500

SN - 9781605111308

T3 - Materials Research Society Symposium Proceedings

SP - 9

EP - 14

BT - Science and Technology of Chemical Mechanical Planarization (CMP)

T2 - 2009 MRS Spring Meeting

Y2 - 14 April 2009 through 17 April 2009

ER -

Pad topography, contact area and hydrodynamic lubrication in chemical-mechanical polishing

Abstract

Publication series

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this