Oxides Formed on Polycrystalline Titanium Thin-Film Surfaces: Rates of Formation and Composition of Oxides Formed at Low and High O2 Partial Pressures

Michael C. Burrell; Neal R. Armstrong

doi:10.1021/la00067a005

Oxides Formed on Polycrystalline Titanium Thin-Film Surfaces: Rates of Formation and Composition of Oxides Formed at Low and High O₂ Partial Pressures

Michael C. Burrell, Neal R. Armstrong

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20 Scopus citations

Abstract

The room temperature surface oxidation of evaporated titanium thin films was investigated by a quartz crystal microbalance and Auger electron spectroscopy. The initial oxidation reaction was characterized by a linear oxygen adsorption rate and the formation of a TiO₂/Ti₂O₃ layer and ends when ca. three monolayers of oxygen have been adsorbed. Continued oxidation occurs at a logarithmic rate, and predominantly TiO₂ is formed. The rate of oxygen adsorption and the limiting oxide thickness were dependent on the constant field growth mechanism proposed by Fehlner and Mott (1970). The results of these studies are used as controls in the investigation of the electrochemical oxidation of titanium—the subject of the following paper in this issue.

Original language	English (US)
Pages (from-to)	30-36
Number of pages	7
Journal	Langmuir
Volume	2
Issue number	1
DOIs	https://doi.org/10.1021/la00067a005
State	Published - 1986
Externally published	Yes

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Surfaces and Interfaces
Spectroscopy
Electrochemistry

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10.1021/la00067a005

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title = "Oxides Formed on Polycrystalline Titanium Thin-Film Surfaces: Rates of Formation and Composition of Oxides Formed at Low and High O2 Partial Pressures",

abstract = "The room temperature surface oxidation of evaporated titanium thin films was investigated by a quartz crystal microbalance and Auger electron spectroscopy. The initial oxidation reaction was characterized by a linear oxygen adsorption rate and the formation of a TiO2/Ti2O3 layer and ends when ca. three monolayers of oxygen have been adsorbed. Continued oxidation occurs at a logarithmic rate, and predominantly TiO2 is formed. The rate of oxygen adsorption and the limiting oxide thickness were dependent on the constant field growth mechanism proposed by Fehlner and Mott (1970). The results of these studies are used as controls in the investigation of the electrochemical oxidation of titanium—the subject of the following paper in this issue.",

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year = "1986",

doi = "10.1021/la00067a005",

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PY - 1986

Y1 - 1986

N2 - The room temperature surface oxidation of evaporated titanium thin films was investigated by a quartz crystal microbalance and Auger electron spectroscopy. The initial oxidation reaction was characterized by a linear oxygen adsorption rate and the formation of a TiO2/Ti2O3 layer and ends when ca. three monolayers of oxygen have been adsorbed. Continued oxidation occurs at a logarithmic rate, and predominantly TiO2 is formed. The rate of oxygen adsorption and the limiting oxide thickness were dependent on the constant field growth mechanism proposed by Fehlner and Mott (1970). The results of these studies are used as controls in the investigation of the electrochemical oxidation of titanium—the subject of the following paper in this issue.

AB - The room temperature surface oxidation of evaporated titanium thin films was investigated by a quartz crystal microbalance and Auger electron spectroscopy. The initial oxidation reaction was characterized by a linear oxygen adsorption rate and the formation of a TiO2/Ti2O3 layer and ends when ca. three monolayers of oxygen have been adsorbed. Continued oxidation occurs at a logarithmic rate, and predominantly TiO2 is formed. The rate of oxygen adsorption and the limiting oxide thickness were dependent on the constant field growth mechanism proposed by Fehlner and Mott (1970). The results of these studies are used as controls in the investigation of the electrochemical oxidation of titanium—the subject of the following paper in this issue.

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Oxides Formed on Polycrystalline Titanium Thin-Film Surfaces: Rates of Formation and Composition of Oxides Formed at Low and High O₂ Partial Pressures

Abstract

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