Oscillatory tunnel magnetoresistance in double barrier magnetic tunnel junctions

Zhong Ming Zeng; Xiu Feng Han; Wen Shan Zhan; Yong Wang; Ze Zhang; Shufeng Zhang

doi:10.1103/PhysRevB.72.054419

Oscillatory tunnel magnetoresistance in double barrier magnetic tunnel junctions

Zhong Ming Zeng, Xiu Feng Han, Wen Shan Zhan, Yong Wang, Ze Zhang, Shufeng Zhang

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

We report an unconventional oscillatory tunnel magnetoresistance as a function of the applied bias in double barrier magnetic tunnel junctions that were made of two Al₂O₃barriers sandwiched by three ferromagnetic layers. When the center ferromagnetic layer is aligned antiparallel to the top and bottom magnetic layers, a distinct magnetoresistance oscillation appears with respect to the increase of the bias voltage at 4.2 K and at room temperature. The period of the oscillation is about 1.6 mV.

Original language	English (US)
Article number	054419
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	72
Issue number	5
DOIs	https://doi.org/10.1103/PhysRevB.72.054419
State	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.72.054419

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title = "Oscillatory tunnel magnetoresistance in double barrier magnetic tunnel junctions",

abstract = "We report an unconventional oscillatory tunnel magnetoresistance as a function of the applied bias in double barrier magnetic tunnel junctions that were made of two Al2O3barriers sandwiched by three ferromagnetic layers. When the center ferromagnetic layer is aligned antiparallel to the top and bottom magnetic layers, a distinct magnetoresistance oscillation appears with respect to the increase of the bias voltage at 4.2 K and at room temperature. The period of the oscillation is about 1.6 mV.",

author = "Zeng, {Zhong Ming} and Han, {Xiu Feng} and Zhan, {Wen Shan} and Yong Wang and Ze Zhang and Shufeng Zhang",

year = "2005",

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language = "English (US)",

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journal = "Physical Review B - Condensed Matter and Materials Physics",

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T1 - Oscillatory tunnel magnetoresistance in double barrier magnetic tunnel junctions

AU - Zeng, Zhong Ming

AU - Han, Xiu Feng

AU - Zhan, Wen Shan

AU - Wang, Yong

AU - Zhang, Ze

AU - Zhang, Shufeng

PY - 2005

Y1 - 2005

N2 - We report an unconventional oscillatory tunnel magnetoresistance as a function of the applied bias in double barrier magnetic tunnel junctions that were made of two Al2O3barriers sandwiched by three ferromagnetic layers. When the center ferromagnetic layer is aligned antiparallel to the top and bottom magnetic layers, a distinct magnetoresistance oscillation appears with respect to the increase of the bias voltage at 4.2 K and at room temperature. The period of the oscillation is about 1.6 mV.

AB - We report an unconventional oscillatory tunnel magnetoresistance as a function of the applied bias in double barrier magnetic tunnel junctions that were made of two Al2O3barriers sandwiched by three ferromagnetic layers. When the center ferromagnetic layer is aligned antiparallel to the top and bottom magnetic layers, a distinct magnetoresistance oscillation appears with respect to the increase of the bias voltage at 4.2 K and at room temperature. The period of the oscillation is about 1.6 mV.

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DO - 10.1103/PhysRevB.72.054419

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JO - Physical Review B - Condensed Matter and Materials Physics

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Oscillatory tunnel magnetoresistance in double barrier magnetic tunnel junctions

Abstract

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