Optoelectronic properties of InGaAs/InGaAsP multiple-quantum well wave-guide detectors

F. S. Choa, T. L. Koch, U. Koren, B. I. Miller

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


The performance of quantum-well (QW) devices relying on carrier transport perpendicular to the wells can be seriously affected by carrier trapping effects; trapping can reduce device speed and carrier accumulation may saturate the absorption and introduce signal distortion. Experimental results are reported which show that InGaAsP barriers with InGaAs wells improve this situation considerably over the InP barrier case. The layer structure of the QW detector is composed of four 80-angstrom InGaAs wells separated by 300-angstrom InGaAsP barriers. The quantum efficiency of samples with buried heterostructure waveguide lengths of 247, 142 and 114 μm was measured. ≥80% quantum efficiency for even the shortest sample was observed, with strong absorption especially at the QW's own lasing wavelength. Also observed was a smooth parasitic-limited roll-off with a 3 dB frequency of approximately 1.5 GHz, with little or no dependence on input power level from 4 μA to 1 mA photocurrent.

Original languageEnglish (US)
Pages (from-to)137
Number of pages1
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
StatePublished - 1989
EventSecond Annual Meeting of the IEEE Lasers and Electro-Optics Society - LEOS '89 - Orlando, FL, USA
Duration: Oct 17 1989Oct 20 1989

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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