Abstract
The performance of InGaAs/InGaAsP multiple-quantum- well material as the absorbing medium in waveguide detectors has been studied. We observe no deleterious saturation effects up to absorbed power of ~ 1 mW, with strong enough absorption for a four-well separate confinement heterostructure to provide ≳80 percent quantum efficiency for lengths at least as short as 114 µm. Frequency response up to 5 GHz shows only a simple parasitic-limited rolloff which matches the measured impedence. These results provide sound evidence that the carrier trapping problem in this quantum-well material combination is much less serious than that in other material systems. In addition to quantum-well field effect optical devices, this has important consequences for photonic integration, since the same quantum-well layers may simultaneously serve as a gain medium and as a detecting medium.
Original language | English (US) |
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Pages (from-to) | 376-378 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 1 |
Issue number | 11 |
DOIs | |
State | Published - Nov 1989 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering