Optically induced biexciton energy shift in semiconductor quantum wells

I. Rumyantsev, N. H. Kwong, R. Takayama, R. Binder, M. Phillips, H. Wang

Research output: Contribution to conferencePaperpeer-review

Abstract

The energy level shift of a coherent biexciton (bound two-exciton state) in a semi-conductor has been observed experimentally and analyzed theoretically. The shift, which results from the presence of excitons, can be related to the AC Stark shifts of the underlying exciton states.

Original languageEnglish (US)
PagesQThPDA7/1-QThPDA7/2
StatePublished - 2003
EventTrends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS) - Baltimore, MD., United States
Duration: Jun 1 2003Jun 6 2003

Other

OtherTrends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS)
Country/TerritoryUnited States
CityBaltimore, MD.
Period6/1/036/6/03

ASJC Scopus subject areas

  • General Physics and Astronomy

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