Optical nonlinearities in semiconductors from charge carrier transport

Alan Kost; Elsa M. Garmire

Optical nonlinearities in semiconductors from charge carrier transport

Alan Kost
, Elsa M. Garmire

Research output: Contribution to conference › Paper › peer-review

Abstract

Summary form only given, as follows. In new semiconductor materials, e.g., hetero n-i-p-i and photorefractive materials, the motion of photogenerated free charges leads to large optical nonlinearities for intensities of <1 mW/cm².

Original language	English (US)
Pages	122
Number of pages	1
State	Published - 1989
Externally published	Yes
Event	Quantum Electronics and Laser Science Conference - Baltimore, MD, USA Duration: Apr 24 1989 → Apr 28 1989

Other

Other	Quantum Electronics and Laser Science Conference
City	Baltimore, MD, USA
Period	4/24/89 → 4/28/89

ASJC Scopus subject areas

General Engineering

Cite this

@conference{bc85e9bf17624cbdbf612b09bc170d01,

title = "Optical nonlinearities in semiconductors from charge carrier transport",

abstract = "Summary form only given, as follows. In new semiconductor materials, e.g., hetero n-i-p-i and photorefractive materials, the motion of photogenerated free charges leads to large optical nonlinearities for intensities of <1 mW/cm2.",

author = "Alan Kost and Garmire, \{Elsa M.\}",

year = "1989",

language = "English (US)",

pages = "122",

note = "Quantum Electronics and Laser Science Conference ; Conference date: 24-04-1989 Through 28-04-1989",

}

TY - CONF

T1 - Optical nonlinearities in semiconductors from charge carrier transport

AU - Kost, Alan

AU - Garmire, Elsa M.

PY - 1989

Y1 - 1989

N2 - Summary form only given, as follows. In new semiconductor materials, e.g., hetero n-i-p-i and photorefractive materials, the motion of photogenerated free charges leads to large optical nonlinearities for intensities of <1 mW/cm2.

AB - Summary form only given, as follows. In new semiconductor materials, e.g., hetero n-i-p-i and photorefractive materials, the motion of photogenerated free charges leads to large optical nonlinearities for intensities of <1 mW/cm2.

UR - https://www.scopus.com/pages/publications/0024899506

UR - https://www.scopus.com/pages/publications/0024899506#tab=citedBy

M3 - Paper

AN - SCOPUS:0024899506

SP - 122

T2 - Quantum Electronics and Laser Science Conference

Y2 - 24 April 1989 through 28 April 1989

ER -

Optical nonlinearities in semiconductors from charge carrier transport

Abstract

Other

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this