Optical bistability in symmetrically strained (GaIn)As/Ga(PAs) superlattices

G. Bastian; G. Von Plessen; J. Feldmann; J. Hader; T. Marschner; W. Stolz; E. O. Göbel

doi:10.1063/1.118042

Optical bistability in symmetrically strained (GaIn)As/Ga(PAs) superlattices

G. Bastian, G. Von Plessen, J. Feldmann, J. Hader, T. Marschner, W. Stolz, E. O. Göbel

Research output: Contribution to journal › Article › peer-review

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Abstract

We have studied the electroabsorptive properties of symmetrically strained (GaIn)As/Ga(PAs) superlattices consisting of 100 periods. Photocurrent measurements at 4 K reveal a pronounced pseudo-blue shift and a Wannier-Stark splitting of the heavy-hole exciton transition. A self-electro-optic effect device has been realized which makes use of the pseudo-blue shift due to the Wannier-Stark localization and of the transparency of the GaAs substrate. The self-electro-optic effect devices show on-off contrast ratios of 2.1 at 77 K and of 1.3 at room temperature.

Original language	English (US)
Pages (from-to)	308-310
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	3
DOIs	https://doi.org/10.1063/1.118042
State	Published - Jul 15 1996
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Optical bistability in symmetrically strained (GaIn)As/Ga(PAs) superlattices",

abstract = "We have studied the electroabsorptive properties of symmetrically strained (GaIn)As/Ga(PAs) superlattices consisting of 100 periods. Photocurrent measurements at 4 K reveal a pronounced pseudo-blue shift and a Wannier-Stark splitting of the heavy-hole exciton transition. A self-electro-optic effect device has been realized which makes use of the pseudo-blue shift due to the Wannier-Stark localization and of the transparency of the GaAs substrate. The self-electro-optic effect devices show on-off contrast ratios of 2.1 at 77 K and of 1.3 at room temperature.",

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T1 - Optical bistability in symmetrically strained (GaIn)As/Ga(PAs) superlattices

AU - Bastian, G.

AU - Von Plessen, G.

AU - Feldmann, J.

AU - Hader, J.

AU - Marschner, T.

AU - Stolz, W.

AU - Göbel, E. O.

PY - 1996/7/15

Y1 - 1996/7/15

N2 - We have studied the electroabsorptive properties of symmetrically strained (GaIn)As/Ga(PAs) superlattices consisting of 100 periods. Photocurrent measurements at 4 K reveal a pronounced pseudo-blue shift and a Wannier-Stark splitting of the heavy-hole exciton transition. A self-electro-optic effect device has been realized which makes use of the pseudo-blue shift due to the Wannier-Stark localization and of the transparency of the GaAs substrate. The self-electro-optic effect devices show on-off contrast ratios of 2.1 at 77 K and of 1.3 at room temperature.

AB - We have studied the electroabsorptive properties of symmetrically strained (GaIn)As/Ga(PAs) superlattices consisting of 100 periods. Photocurrent measurements at 4 K reveal a pronounced pseudo-blue shift and a Wannier-Stark splitting of the heavy-hole exciton transition. A self-electro-optic effect device has been realized which makes use of the pseudo-blue shift due to the Wannier-Stark localization and of the transparency of the GaAs substrate. The self-electro-optic effect devices show on-off contrast ratios of 2.1 at 77 K and of 1.3 at room temperature.

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Optical bistability in symmetrically strained (GaIn)As/Ga(PAs) superlattices

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