@inproceedings{bf6135cf1d5b46f5a439bcae77e66999,
title = "Opportunities and challenges in electrochemical-mechanical planarization (ECMP)",
abstract = "Electrochemical-mechanical planarization is challenging conventional CMP for use in the planarization of certain metallic films, especially copper. Because of the complex interplay between electrochemical and mechanical factors, and the evolution of newer metals such as ruthenium as barrier materials, the ECMP field is wide open for research in the area of consumables. In this paper, recent work in the area of ECMP of copper and tantalum is reviewed, with special reference to chemical formulations. Opportunities in ECMP of ruthenium are highlighted through a discussion of its chemistry and electrochemistry.",
keywords = "Copper, Electrochemical-mechanical planarization, Ruthenium, Tantalum",
author = "A. Muthukumaran and N. Venkataraman and S. Raghavan and M. Keswani",
year = "2008",
language = "English (US)",
isbn = "9789881740816",
series = "Proceedings - Electrochemical Society",
pages = "511--517",
booktitle = "Semiconductor Technology, ISTC 2008 - Proceedings of the 7th International Conference on Semiconductor Technology",
note = "7th International Conference on Semiconductor Technology, ISTC 2008 ; Conference date: 15-03-2008 Through 17-03-2008",
}