Operating Characteristics of InGaAs-GaAs MQW Hetero-nipi Waveguipide Modulators

S. D. Koehler; E. M. Garmire; A. R. Kost; D. Yap; D. P. Docter; T. C. Hasenberg

doi:10.1109/68.404001

Operating Characteristics of InGaAs-GaAs MQW Hetero-nipi Waveguipide Modulators

S. D. Koehler, E. M. Garmire, A. R. Kost, D. Yap, D. P. Docter, T. C. Hasenberg

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We report frequency response measurements of optical MQW nipi waveguide modulators, observing a –3-dB bandwidth as high as 110 MHz. These devices have only 900-Å-thick intrinsic regions, and thus can achieve very high fields with modest reverse bias voltages. We also measured absorption modulation (32 dB) and a phase change figure of merit as low asVπ× L = 0.8 V mm at a detuning of 115 meV below the photoluminescence peak. We compare ion-implanted selective contacts with traditional selective metal contacts.

Original language	English (US)
Pages (from-to)	878-880
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	7
Issue number	8
DOIs	https://doi.org/10.1109/68.404001
State	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.404001

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@article{04e6831e05e944fea9809775882c1edb,

title = "Operating Characteristics of InGaAs-GaAs MQW Hetero-nipi Waveguipide Modulators",

abstract = "We report frequency response measurements of optical MQW nipi waveguide modulators, observing a –3-dB bandwidth as high as 110 MHz. These devices have only 900-{\AA}-thick intrinsic regions, and thus can achieve very high fields with modest reverse bias voltages. We also measured absorption modulation (32 dB) and a phase change figure of merit as low asVπ× L = 0.8 V mm at a detuning of 115 meV below the photoluminescence peak. We compare ion-implanted selective contacts with traditional selective metal contacts.",

author = "Koehler, {S. D.} and Garmire, {E. M.} and Kost, {A. R.} and D. Yap and Docter, {D. P.} and Hasenberg, {T. C.}",

note = "Funding Information: Manuscript received February 10, 1995; revised April 11, 1995. This work was supported in part by the Advanced Research Projects Agency through the National Center for Integrated Photonic Technology.",

year = "1995",

doi = "10.1109/68.404001",

language = "English (US)",

volume = "7",

pages = "878--880",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Operating Characteristics of InGaAs-GaAs MQW Hetero-nipi Waveguipide Modulators

AU - Koehler, S. D.

AU - Garmire, E. M.

AU - Kost, A. R.

AU - Yap, D.

AU - Docter, D. P.

AU - Hasenberg, T. C.

N1 - Funding Information: Manuscript received February 10, 1995; revised April 11, 1995. This work was supported in part by the Advanced Research Projects Agency through the National Center for Integrated Photonic Technology.

PY - 1995

Y1 - 1995

N2 - We report frequency response measurements of optical MQW nipi waveguide modulators, observing a –3-dB bandwidth as high as 110 MHz. These devices have only 900-Å-thick intrinsic regions, and thus can achieve very high fields with modest reverse bias voltages. We also measured absorption modulation (32 dB) and a phase change figure of merit as low asVπ× L = 0.8 V mm at a detuning of 115 meV below the photoluminescence peak. We compare ion-implanted selective contacts with traditional selective metal contacts.

AB - We report frequency response measurements of optical MQW nipi waveguide modulators, observing a –3-dB bandwidth as high as 110 MHz. These devices have only 900-Å-thick intrinsic regions, and thus can achieve very high fields with modest reverse bias voltages. We also measured absorption modulation (32 dB) and a phase change figure of merit as low asVπ× L = 0.8 V mm at a detuning of 115 meV below the photoluminescence peak. We compare ion-implanted selective contacts with traditional selective metal contacts.

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JF - IEEE Photonics Technology Letters

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ER -

Operating Characteristics of InGaAs-GaAs MQW Hetero-nipi Waveguipide Modulators

Abstract

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