Operating Characteristics of InGaAs-GaAs MQW Hetero-nipi Waveguipide Modulators

S. D. Koehler, E. M. Garmire, A. R. Kost, D. Yap, D. P. Docter, T. C. Hasenberg

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


We report frequency response measurements of optical MQW nipi waveguide modulators, observing a –3-dB bandwidth as high as 110 MHz. These devices have only 900-Å-thick intrinsic regions, and thus can achieve very high fields with modest reverse bias voltages. We also measured absorption modulation (32 dB) and a phase change figure of merit as low asVπ× L = 0.8 V mm at a detuning of 115 meV below the photoluminescence peak. We compare ion-implanted selective contacts with traditional selective metal contacts.

Original languageEnglish (US)
Pages (from-to)878-880
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number8
StatePublished - 1995
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Operating Characteristics of InGaAs-GaAs MQW Hetero-nipi Waveguipide Modulators'. Together they form a unique fingerprint.

Cite this