Observation of spectral hole sidebands in the gain region of an inverted semiconductor

Georg Mohs; Rudolf H. Binder; Brian Fluegel; Harald Giessen; Nasser Peyghambarian

doi:10.1117/12.238962

Observation of spectral hole sidebands in the gain region of an inverted semiconductor

Georg Mohs, Rudolf H. Binder, Brian Fluegel, Harald Giessen, Nasser Peyghambarian

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have performed ultrafast three-pulse experiments in order to investigate the relaxation of charge carriers from a non-equilibrium distribution in inverted GaAs multiple quantum wells. The first pulse, used to create optical gain, was followed by a conventional pump-probe study. The pump-induced spectral hole inside the optical gain was accompanied by sidebands which occurred about 39 meV above the original spectral hole. These sidebands can be explained in terms of LO-phonon scattering of the charge carriers into the vacancies of the spectral hole.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Pages	274-281
Number of pages	8
Volume	2693
DOIs	https://doi.org/10.1117/12.238962
State	Published - 1996
Event	Physics and Simulation of Optoelectronic Devices IV - San Jose, CA, USA Duration: Jan 29 1996 → Feb 2 1996

Other

Other	Physics and Simulation of Optoelectronic Devices IV
City	San Jose, CA, USA
Period	1/29/96 → 2/2/96

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.238962

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Mohs, G, Binder, RH, Fluegel, B, Giessen, H & Peyghambarian, N 1996, Observation of spectral hole sidebands in the gain region of an inverted semiconductor. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 2693, pp. 274-281, Physics and Simulation of Optoelectronic Devices IV, San Jose, CA, USA, 1/29/96. https://doi.org/10.1117/12.238962

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abstract = "We have performed ultrafast three-pulse experiments in order to investigate the relaxation of charge carriers from a non-equilibrium distribution in inverted GaAs multiple quantum wells. The first pulse, used to create optical gain, was followed by a conventional pump-probe study. The pump-induced spectral hole inside the optical gain was accompanied by sidebands which occurred about 39 meV above the original spectral hole. These sidebands can be explained in terms of LO-phonon scattering of the charge carriers into the vacancies of the spectral hole.",

author = "Georg Mohs and Binder, \{Rudolf H.\} and Brian Fluegel and Harald Giessen and Nasser Peyghambarian",

year = "1996",

doi = "10.1117/12.238962",

language = "English (US)",

isbn = "0819420670",

volume = "2693",

pages = "274--281",

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note = "Physics and Simulation of Optoelectronic Devices IV ; Conference date: 29-01-1996 Through 02-02-1996",

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T1 - Observation of spectral hole sidebands in the gain region of an inverted semiconductor

AU - Mohs, Georg

AU - Binder, Rudolf H.

AU - Fluegel, Brian

AU - Giessen, Harald

AU - Peyghambarian, Nasser

PY - 1996

Y1 - 1996

N2 - We have performed ultrafast three-pulse experiments in order to investigate the relaxation of charge carriers from a non-equilibrium distribution in inverted GaAs multiple quantum wells. The first pulse, used to create optical gain, was followed by a conventional pump-probe study. The pump-induced spectral hole inside the optical gain was accompanied by sidebands which occurred about 39 meV above the original spectral hole. These sidebands can be explained in terms of LO-phonon scattering of the charge carriers into the vacancies of the spectral hole.

AB - We have performed ultrafast three-pulse experiments in order to investigate the relaxation of charge carriers from a non-equilibrium distribution in inverted GaAs multiple quantum wells. The first pulse, used to create optical gain, was followed by a conventional pump-probe study. The pump-induced spectral hole inside the optical gain was accompanied by sidebands which occurred about 39 meV above the original spectral hole. These sidebands can be explained in terms of LO-phonon scattering of the charge carriers into the vacancies of the spectral hole.

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U2 - 10.1117/12.238962

DO - 10.1117/12.238962

M3 - Conference contribution

AN - SCOPUS:0029771884

SN - 0819420670

SN - 9780819420671

VL - 2693

SP - 274

EP - 281

BT - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Physics and Simulation of Optoelectronic Devices IV

Y2 - 29 January 1996 through 2 February 1996

ER -

Observation of spectral hole sidebands in the gain region of an inverted semiconductor

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