Observation of spectral hole sidebands in the gain region of an inverted semiconductor

Georg Mohs, Rudolf H. Binder, Brian Fluegel, Harald Giessen, Nasser Peyghambarian

Research output: Chapter in Book/Report/Conference proceedingConference contribution


We have performed ultrafast three-pulse experiments in order to investigate the relaxation of charge carriers from a non-equilibrium distribution in inverted GaAs multiple quantum wells. The first pulse, used to create optical gain, was followed by a conventional pump-probe study. The pump-induced spectral hole inside the optical gain was accompanied by sidebands which occurred about 39 meV above the original spectral hole. These sidebands can be explained in terms of LO-phonon scattering of the charge carriers into the vacancies of the spectral hole.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Number of pages8
StatePublished - 1996
EventPhysics and Simulation of Optoelectronic Devices IV - San Jose, CA, USA
Duration: Jan 29 1996Feb 2 1996


OtherPhysics and Simulation of Optoelectronic Devices IV
CitySan Jose, CA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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