Observation of interface band bending on GaAs/AlAs heterostructures by scanning tunneling microscopy

Dror Sarid; Xiaowei Yao; Richard K. Workman; Charles A. Peterson; Mahmoud Fallahi

doi:10.1117/12.307615

Observation of interface band bending on GaAs/AlAs heterostructures by scanning tunneling microscopy

Dror Sarid, Xiaowei Yao, Richard K. Workman, Charles A. Peterson, Mahmoud Fallahi

Optical Sciences

Research output: Contribution to journal › Conference article › peer-review

Abstract

The electronic structure at the interface of GaAs/AlAs multilayers grown by molecular beam epitaxy is investigated on the (110) surface using scanning tunneling microscopy. The valence band bending, which is produced by an interface dipole layer, is observed from cross-sectional profiles exhibiting spike structures. It is found that the transition region of the AlAs/GaAs interface (3.0-4.0 nm) is smaller than that of the GaAs/AlAs interface (4.0-5.0 nm). Similar spike structures showing a transition region of 3.5-4.5 nm are also observed at the GaAs/Al_0.6Ga_0.4As interface.

Original language	English (US)
Pages (from-to)	51-58
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3285
DOIs	https://doi.org/10.1117/12.307615
State	Published - 1998
Event	Fabrication, Testing and Reliability of Semiconductor Lasers III - San Jose, CA, United States Duration: Jan 29 1998 → Jan 30 1998

Keywords

Band bending
III-V heterostructures
Interface
Scanning tunneling microscopy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.307615

Cite this

@article{269d8a27765e4a5e83788861d9d53132,

title = "Observation of interface band bending on GaAs/AlAs heterostructures by scanning tunneling microscopy",

abstract = "The electronic structure at the interface of GaAs/AlAs multilayers grown by molecular beam epitaxy is investigated on the (110) surface using scanning tunneling microscopy. The valence band bending, which is produced by an interface dipole layer, is observed from cross-sectional profiles exhibiting spike structures. It is found that the transition region of the AlAs/GaAs interface (3.0-4.0 nm) is smaller than that of the GaAs/AlAs interface (4.0-5.0 nm). Similar spike structures showing a transition region of 3.5-4.5 nm are also observed at the GaAs/Al0.6Ga0.4As interface.",

keywords = "Band bending, III-V heterostructures, Interface, Scanning tunneling microscopy",

author = "Dror Sarid and Xiaowei Yao and Workman, {Richard K.} and Peterson, {Charles A.} and Mahmoud Fallahi",

year = "1998",

doi = "10.1117/12.307615",

language = "English (US)",

volume = "3285",

pages = "51--58",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Fabrication, Testing and Reliability of Semiconductor Lasers III ; Conference date: 29-01-1998 Through 30-01-1998",

}

TY - JOUR

T1 - Observation of interface band bending on GaAs/AlAs heterostructures by scanning tunneling microscopy

AU - Sarid, Dror

AU - Yao, Xiaowei

AU - Workman, Richard K.

AU - Peterson, Charles A.

AU - Fallahi, Mahmoud

PY - 1998

Y1 - 1998

N2 - The electronic structure at the interface of GaAs/AlAs multilayers grown by molecular beam epitaxy is investigated on the (110) surface using scanning tunneling microscopy. The valence band bending, which is produced by an interface dipole layer, is observed from cross-sectional profiles exhibiting spike structures. It is found that the transition region of the AlAs/GaAs interface (3.0-4.0 nm) is smaller than that of the GaAs/AlAs interface (4.0-5.0 nm). Similar spike structures showing a transition region of 3.5-4.5 nm are also observed at the GaAs/Al0.6Ga0.4As interface.

AB - The electronic structure at the interface of GaAs/AlAs multilayers grown by molecular beam epitaxy is investigated on the (110) surface using scanning tunneling microscopy. The valence band bending, which is produced by an interface dipole layer, is observed from cross-sectional profiles exhibiting spike structures. It is found that the transition region of the AlAs/GaAs interface (3.0-4.0 nm) is smaller than that of the GaAs/AlAs interface (4.0-5.0 nm). Similar spike structures showing a transition region of 3.5-4.5 nm are also observed at the GaAs/Al0.6Ga0.4As interface.

KW - Band bending

KW - III-V heterostructures

KW - Interface

KW - Scanning tunneling microscopy

UR - http://www.scopus.com/inward/record.url?scp=0032225445&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032225445&partnerID=8YFLogxK

U2 - 10.1117/12.307615

DO - 10.1117/12.307615

M3 - Conference article

AN - SCOPUS:0032225445

SN - 0277-786X

VL - 3285

SP - 51

EP - 58

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Fabrication, Testing and Reliability of Semiconductor Lasers III

Y2 - 29 January 1998 through 30 January 1998

ER -

Observation of interface band bending on GaAs/AlAs heterostructures by scanning tunneling microscopy

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this