Observation of an oxygen resonance in reflectivity from weakly absorbing thin silicon layers

S. O. Sari; P. Hollingsworth Smith; H. S. Gurev

doi:10.1103/PhysRevB.15.4817

Observation of an oxygen resonance in reflectivity from weakly absorbing thin silicon layers

S. O. Sari, P. Hollingsworth Smith, H. S. Gurev

Lunar and Planetary Lab

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A bulk polariton has been discovered in silicon films deposited by silane vapor deposition on substrates of highly reflecting silver. From reflectivity measurements, resonances at 8.3 and 10 μm are examined using a simple model. Properties of the observed transitions, due to impurity oxygen in silicon, have been determined by an analysis of our spectra for semiconductor layers of increasing thickness between 1.5 and 6 μm.

Original language	English (US)
Pages (from-to)	4817-4821
Number of pages	5
Journal	Physical Review B
Volume	15
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.15.4817
State	Published - 1977

ASJC Scopus subject areas

Condensed Matter Physics

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10.1103/PhysRevB.15.4817

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title = "Observation of an oxygen resonance in reflectivity from weakly absorbing thin silicon layers",

abstract = "A bulk polariton has been discovered in silicon films deposited by silane vapor deposition on substrates of highly reflecting silver. From reflectivity measurements, resonances at 8.3 and 10 μm are examined using a simple model. Properties of the observed transitions, due to impurity oxygen in silicon, have been determined by an analysis of our spectra for semiconductor layers of increasing thickness between 1.5 and 6 μm.",

author = "Sari, {S. O.} and Smith, {P. Hollingsworth} and Gurev, {H. S.}",

year = "1977",

doi = "10.1103/PhysRevB.15.4817",

language = "English (US)",

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pages = "4817--4821",

journal = "Physical Review B",

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AU - Sari, S. O.

AU - Smith, P. Hollingsworth

AU - Gurev, H. S.

PY - 1977

Y1 - 1977

N2 - A bulk polariton has been discovered in silicon films deposited by silane vapor deposition on substrates of highly reflecting silver. From reflectivity measurements, resonances at 8.3 and 10 μm are examined using a simple model. Properties of the observed transitions, due to impurity oxygen in silicon, have been determined by an analysis of our spectra for semiconductor layers of increasing thickness between 1.5 and 6 μm.

AB - A bulk polariton has been discovered in silicon films deposited by silane vapor deposition on substrates of highly reflecting silver. From reflectivity measurements, resonances at 8.3 and 10 μm are examined using a simple model. Properties of the observed transitions, due to impurity oxygen in silicon, have been determined by an analysis of our spectra for semiconductor layers of increasing thickness between 1.5 and 6 μm.

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DO - 10.1103/PhysRevB.15.4817

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Observation of an oxygen resonance in reflectivity from weakly absorbing thin silicon layers

Abstract

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