Abstract
We develop a general numerical method for investigating nonlinear guided-wave phenomena in semiconductors including the effects of carrier diffusion. The macroscopic field evolution is handled by using the beam-propagation method, and the microscopic semiconductor response is obtained from a previously developed plasma theory. Coupled field-matter equations are given and solved numerically for a nonlinear directional coupler by using the material parameters of the room-temperature, bulk semiconductors GaAs and CdSe.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1598-1606 |
| Number of pages | 9 |
| Journal | Journal of the Optical Society of America B: Optical Physics |
| Volume | 6 |
| Issue number | 8 |
| DOIs | |
| State | Published - Aug 1989 |
ASJC Scopus subject areas
- Statistical and Nonlinear Physics
- Atomic and Molecular Physics, and Optics