Numerical simulation of guided-wave phenomena in semiconductors

E. M. Wright, G. L. Stegeman, S. W. Koch

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


We develop a general numerical method for investigating nonlinear guided-wave phenomena in semiconductors including the effects of carrier diffusion. The macroscopic field evolution is handled by using the beam-propagation method, and the microscopic semiconductor response is obtained from a previously developed plasma theory. Coupled field-matter equations are given and solved numerically for a nonlinear directional coupler by using the material parameters of the room-temperature, bulk semiconductors GaAs and CdSe.

Original languageEnglish (US)
Pages (from-to)1598-1606
Number of pages9
JournalJournal of the Optical Society of America B: Optical Physics
Issue number8
StatePublished - Aug 1989

ASJC Scopus subject areas

  • Statistical and Nonlinear Physics
  • Atomic and Molecular Physics, and Optics


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