Novel type-II material system for laser applications in the near-infrared regime

C. Berger; C. Möller; P. Hens; C. Fuchs; W. Stolz; S. W. Koch; A. Ruiz Perez; J. Hader; J. V. Moloney

doi:10.1063/1.4917180

Novel type-II material system for laser applications in the near-infrared regime

C. Berger
, C. Möller
, P. Hens
, C. Fuchs
, W. Stolz
, S. W. Koch
, A. Ruiz Perez
, J. Hader
, J. V. Moloney

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

The design and experimental realization of a type-II "W"-multiple quantum well heterostructure for emission in the λ > 1.2 μm range is presented. The experimental photoluminescence spectra for different excitation intensities are analyzed using microscopic quantum theory. On the basis of the good theory-experiment agreement, the gain properties of the system are computed using the semiconductor Bloch equations. Gain values comparable to those of type-I systems are obtained.

Original language	English (US)
Article number	047105
Journal	AIP Advances
Volume	5
Issue number	4
DOIs	https://doi.org/10.1063/1.4917180
State	Published - Apr 1 2015
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.4917180

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title = "Novel type-II material system for laser applications in the near-infrared regime",

abstract = "The design and experimental realization of a type-II {"}W{"}-multiple quantum well heterostructure for emission in the λ > 1.2 μm range is presented. The experimental photoluminescence spectra for different excitation intensities are analyzed using microscopic quantum theory. On the basis of the good theory-experiment agreement, the gain properties of the system are computed using the semiconductor Bloch equations. Gain values comparable to those of type-I systems are obtained.",

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AU - Berger, C.

AU - Möller, C.

AU - Hens, P.

AU - Fuchs, C.

AU - Stolz, W.

AU - Koch, S. W.

AU - Ruiz Perez, A.

AU - Hader, J.

AU - Moloney, J. V.

PY - 2015/4/1

Y1 - 2015/4/1

N2 - The design and experimental realization of a type-II "W"-multiple quantum well heterostructure for emission in the λ > 1.2 μm range is presented. The experimental photoluminescence spectra for different excitation intensities are analyzed using microscopic quantum theory. On the basis of the good theory-experiment agreement, the gain properties of the system are computed using the semiconductor Bloch equations. Gain values comparable to those of type-I systems are obtained.

AB - The design and experimental realization of a type-II "W"-multiple quantum well heterostructure for emission in the λ > 1.2 μm range is presented. The experimental photoluminescence spectra for different excitation intensities are analyzed using microscopic quantum theory. On the basis of the good theory-experiment agreement, the gain properties of the system are computed using the semiconductor Bloch equations. Gain values comparable to those of type-I systems are obtained.

UR - https://www.scopus.com/pages/publications/84926429464

UR - https://www.scopus.com/pages/publications/84926429464#tab=citedBy

U2 - 10.1063/1.4917180

DO - 10.1063/1.4917180

M3 - Article

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JO - AIP Advances

JF - AIP Advances

IS - 4

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ER -

Novel type-II material system for laser applications in the near-infrared regime

Abstract

ASJC Scopus subject areas

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