Novel slurry injection system for improved slurry flow, enhanced material removal and reduced defects in CMP

Yun Zhuang; Yasa Sampurno; Leonard Borucki; Ara Philipossian

doi:10.1109/ICPT.2014.7017242

Novel slurry injection system for improved slurry flow, enhanced material removal and reduced defects in CMP

Yun Zhuang, Yasa Sampurno, Leonard Borucki, Ara Philipossian

Chemical and Environmental Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this study, a novel slurry injection system (SIS) is introduced. SIS is placed on top of the pad which conformally rides on the pad surface during polishing and presents a thin and uniform slurry film to the wafer. Examples of SIS installed on various 200 and 300 mm commercial polishers are shown. Removal rate and polishing defects are compared between SIS and the conventional pad center area slurry application method. Through more efficient slurry delivery and reduced slurry mixing and dilution, SIS has achieved more uniform slurry flow, higher material removal rate or the same removal rate with significantly lower slurry consumption, and lower number of wafer-level polishing defects than the conventional slurry application method.

Original language	English (US)
Title of host publication	ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	45-49
Number of pages	5
ISBN (Electronic)	9781479955565
DOIs	https://doi.org/10.1109/ICPT.2014.7017242
State	Published - Jan 20 2015
Event	11th International Conference on Planarization/CMP Technology, ICPT 2014 - Kobe, Japan Duration: Nov 19 2014 → Nov 21 2014

Publication series

Name	ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014

Other

Other	11th International Conference on Planarization/CMP Technology, ICPT 2014
Country/Territory	Japan
City	Kobe
Period	11/19/14 → 11/21/14

ASJC Scopus subject areas

Electrical and Electronic Engineering
Hardware and Architecture

Access to Document

10.1109/ICPT.2014.7017242

Cite this

Zhuang, Y., Sampurno, Y., Borucki, L., & Philipossian, A. (2015). Novel slurry injection system for improved slurry flow, enhanced material removal and reduced defects in CMP. In ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014 (pp. 45-49). Article 7017242 (ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICPT.2014.7017242

Novel slurry injection system for improved slurry flow, enhanced material removal and reduced defects in CMP. / Zhuang, Yun; Sampurno, Yasa; Borucki, Leonard et al.
ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014. Institute of Electrical and Electronics Engineers Inc., 2015. p. 45-49 7017242 (ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhuang, Y, Sampurno, Y, Borucki, L & Philipossian, A 2015, Novel slurry injection system for improved slurry flow, enhanced material removal and reduced defects in CMP. in ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014., 7017242, ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014, Institute of Electrical and Electronics Engineers Inc., pp. 45-49, 11th International Conference on Planarization/CMP Technology, ICPT 2014, Kobe, Japan, 11/19/14. https://doi.org/10.1109/ICPT.2014.7017242

Zhuang Y, Sampurno Y, Borucki L, Philipossian A. Novel slurry injection system for improved slurry flow, enhanced material removal and reduced defects in CMP. In ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014. Institute of Electrical and Electronics Engineers Inc. 2015. p. 45-49. 7017242. (ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014). doi: 10.1109/ICPT.2014.7017242

Zhuang, Yun ; Sampurno, Yasa ; Borucki, Leonard et al. / Novel slurry injection system for improved slurry flow, enhanced material removal and reduced defects in CMP. ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 45-49 (ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014).

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abstract = "In this study, a novel slurry injection system (SIS) is introduced. SIS is placed on top of the pad which conformally rides on the pad surface during polishing and presents a thin and uniform slurry film to the wafer. Examples of SIS installed on various 200 and 300 mm commercial polishers are shown. Removal rate and polishing defects are compared between SIS and the conventional pad center area slurry application method. Through more efficient slurry delivery and reduced slurry mixing and dilution, SIS has achieved more uniform slurry flow, higher material removal rate or the same removal rate with significantly lower slurry consumption, and lower number of wafer-level polishing defects than the conventional slurry application method.",

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AB - In this study, a novel slurry injection system (SIS) is introduced. SIS is placed on top of the pad which conformally rides on the pad surface during polishing and presents a thin and uniform slurry film to the wafer. Examples of SIS installed on various 200 and 300 mm commercial polishers are shown. Removal rate and polishing defects are compared between SIS and the conventional pad center area slurry application method. Through more efficient slurry delivery and reduced slurry mixing and dilution, SIS has achieved more uniform slurry flow, higher material removal rate or the same removal rate with significantly lower slurry consumption, and lower number of wafer-level polishing defects than the conventional slurry application method.

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Novel slurry injection system for improved slurry flow, enhanced material removal and reduced defects in CMP

Abstract

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