Novel Multiple Quantum Well modulators for optical interconnects

M. F. Krol; R. K. Boncek; M. J. Hayduk; S. Ten; T. Ohtsuki; B. P. McGinnis; G. Khitrova; H. M. Gibbs; N. Peyghambarian

doi:10.1117/12.201992

Novel Multiple Quantum Well modulators for optical interconnects

M. F. Krol, R. K. Boncek, M. J. Hayduk, S. Ten, T. Ohtsuki, B. P. McGinnis, G. Khitrova, H. M. Gibbs, N. Peyghambarian

Research output: Contribution to journal › Conference article › peer-review

Abstract

Novel Multiple Quantum Well (MQW) optical modulators for use in time-division optical fiber interconnects will be presented. A bit-error-rate analysis of a time-division receiver indicates high contrast ratio optical gates are required for high-speed interconnect applications. A high contrast MQW gate, consisting of a nonlinear asymmetric reflection modulator, suitable for use in optical time-division systems will be presented which utilizes the GaAlInAs alloy lattice-matched to InP. This system is ideal for optical interconnect applications since MQW materials and devices are easily designed for operation in the optical fiber transmission windows of 1.3 and 1.5 μm. Utilizing Asymmetric Double Quantum Wells (ADQWs) as the nonlinear spacer for the asymmetric reflection modulator will also be discussed. The recovery time of ADQWs can be tailored for interconnect applications by choosing the optimum width of the tunnel barrier. Electrooptic modulators which utilize real space transfer of electrons in ADQWs will also be presented.

Original language	English (US)
Pages (from-to)	39-51
Number of pages	13
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	2449
DOIs	https://doi.org/10.1117/12.201992
State	Published - Feb 22 1995
Event	Fiber Optic Network Components 1995 - Amsterdam, Netherlands Duration: Mar 20 1995 → Mar 24 1995

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.201992

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Novel Multiple Quantum Well modulators for optical interconnects. / Krol, M. F.; Boncek, R. K.; Hayduk, M. J.; Ten, S.; Ohtsuki, T.; McGinnis, B. P.; Khitrova, G.; Gibbs, H. M.; Peyghambarian, N.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 2449, 22.02.1995, p. 39-51.

Research output: Contribution to journal › Conference article › peer-review

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title = "Novel Multiple Quantum Well modulators for optical interconnects",

abstract = "Novel Multiple Quantum Well (MQW) optical modulators for use in time-division optical fiber interconnects will be presented. A bit-error-rate analysis of a time-division receiver indicates high contrast ratio optical gates are required for high-speed interconnect applications. A high contrast MQW gate, consisting of a nonlinear asymmetric reflection modulator, suitable for use in optical time-division systems will be presented which utilizes the GaAlInAs alloy lattice-matched to InP. This system is ideal for optical interconnect applications since MQW materials and devices are easily designed for operation in the optical fiber transmission windows of 1.3 and 1.5 μm. Utilizing Asymmetric Double Quantum Wells (ADQWs) as the nonlinear spacer for the asymmetric reflection modulator will also be discussed. The recovery time of ADQWs can be tailored for interconnect applications by choosing the optimum width of the tunnel barrier. Electrooptic modulators which utilize real space transfer of electrons in ADQWs will also be presented.",

author = "Krol, {M. F.} and Boncek, {R. K.} and Hayduk, {M. J.} and S. Ten and T. Ohtsuki and McGinnis, {B. P.} and G. Khitrova and Gibbs, {H. M.} and N. Peyghambarian",

note = "Funding Information: M. F. Krol would like to thank Dr. Richard Leavitt and Mr. John Pham of the Army Research Laboratory in Adelphi, Maryland for fabricating the modulation doped ADQW structures. The Arizona group acknowledges support from the Rome Laboratory Photonics Center, ARPA Optoelectronic Materials Center, and the NSF. Publisher Copyright: {\textcopyright} 1995 SPIE. All rights reserved.; Fiber Optic Network Components 1995 ; Conference date: 20-03-1995 Through 24-03-1995",

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AU - Boncek, R. K.

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AU - Ten, S.

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AU - McGinnis, B. P.

AU - Khitrova, G.

AU - Gibbs, H. M.

AU - Peyghambarian, N.

N1 - Funding Information: M. F. Krol would like to thank Dr. Richard Leavitt and Mr. John Pham of the Army Research Laboratory in Adelphi, Maryland for fabricating the modulation doped ADQW structures. The Arizona group acknowledges support from the Rome Laboratory Photonics Center, ARPA Optoelectronic Materials Center, and the NSF. Publisher Copyright: © 1995 SPIE. All rights reserved.

PY - 1995/2/22

Y1 - 1995/2/22

N2 - Novel Multiple Quantum Well (MQW) optical modulators for use in time-division optical fiber interconnects will be presented. A bit-error-rate analysis of a time-division receiver indicates high contrast ratio optical gates are required for high-speed interconnect applications. A high contrast MQW gate, consisting of a nonlinear asymmetric reflection modulator, suitable for use in optical time-division systems will be presented which utilizes the GaAlInAs alloy lattice-matched to InP. This system is ideal for optical interconnect applications since MQW materials and devices are easily designed for operation in the optical fiber transmission windows of 1.3 and 1.5 μm. Utilizing Asymmetric Double Quantum Wells (ADQWs) as the nonlinear spacer for the asymmetric reflection modulator will also be discussed. The recovery time of ADQWs can be tailored for interconnect applications by choosing the optimum width of the tunnel barrier. Electrooptic modulators which utilize real space transfer of electrons in ADQWs will also be presented.

AB - Novel Multiple Quantum Well (MQW) optical modulators for use in time-division optical fiber interconnects will be presented. A bit-error-rate analysis of a time-division receiver indicates high contrast ratio optical gates are required for high-speed interconnect applications. A high contrast MQW gate, consisting of a nonlinear asymmetric reflection modulator, suitable for use in optical time-division systems will be presented which utilizes the GaAlInAs alloy lattice-matched to InP. This system is ideal for optical interconnect applications since MQW materials and devices are easily designed for operation in the optical fiber transmission windows of 1.3 and 1.5 μm. Utilizing Asymmetric Double Quantum Wells (ADQWs) as the nonlinear spacer for the asymmetric reflection modulator will also be discussed. The recovery time of ADQWs can be tailored for interconnect applications by choosing the optimum width of the tunnel barrier. Electrooptic modulators which utilize real space transfer of electrons in ADQWs will also be presented.

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T2 - Fiber Optic Network Components 1995

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Novel Multiple Quantum Well modulators for optical interconnects

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