TY - GEN
T1 - Novel end-point detection method by monitoring shear force oscillation frequency for barrier metal polishing in advanced LSI
AU - Gu, Xun
AU - Nemoto, Takenao
AU - Sampurno, Yasa
AU - Cheng, Jiang
AU - Theng, Sian Nie
AU - Philipossian, Ara
AU - Zhuang, Yun
AU - Teramoto, Akinobu
AU - Ito, Takashi
AU - Sugawa, Shigetoshi
AU - Ohmi, Tadahiro
PY - 2010
Y1 - 2010
N2 - A novel end-point detection method based on a combination of shear force and its spectral amplitude was proposed for barrier metal polishing on copper damascene structures. Under some polishing conditions, the shear force changed significantly with polished substrate. On the other hand, the change in shear force was insignificant under certain polishing conditions. Therefore, a complementary end-point detection method by monitoring oscillation frequency of shear force was proposed. It was found that the shear force fluctuated in unique frequencies depending on polished substrates. Using Fast Fourier Transformation, the shear force data was converted from time domain to frequency domain. The amplitude of spectral frequencies corresponding to the rotational rate of wafer carrier and platen was monitored. Significant frequency amplitude changes were observed before, during and after the polished layer transition from barrier film to silicon dioxide film. The results indicated that a combination of shear force and its spectral amplitude analyses provided effective end-point detection for barrier CMP process.
AB - A novel end-point detection method based on a combination of shear force and its spectral amplitude was proposed for barrier metal polishing on copper damascene structures. Under some polishing conditions, the shear force changed significantly with polished substrate. On the other hand, the change in shear force was insignificant under certain polishing conditions. Therefore, a complementary end-point detection method by monitoring oscillation frequency of shear force was proposed. It was found that the shear force fluctuated in unique frequencies depending on polished substrates. Using Fast Fourier Transformation, the shear force data was converted from time domain to frequency domain. The amplitude of spectral frequencies corresponding to the rotational rate of wafer carrier and platen was monitored. Significant frequency amplitude changes were observed before, during and after the polished layer transition from barrier film to silicon dioxide film. The results indicated that a combination of shear force and its spectral amplitude analyses provided effective end-point detection for barrier CMP process.
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M3 - Conference contribution
AN - SCOPUS:77953964855
SN - 9781605111308
T3 - Materials Research Society Symposium Proceedings
SP - 157
EP - 162
BT - Science and Technology of Chemical Mechanical Planarization (CMP)
T2 - 2009 MRS Spring Meeting
Y2 - 14 April 2009 through 17 April 2009
ER -