Normal mode coupling in a 3D semiconductor nanocavity

E. S. Lee; S. Park; O. Ell; P. Brick; H. M. Gibbs; G. Khitrova; D. G. Deppe; D. L. Huffaker

Normal mode coupling in a 3D semiconductor nanocavity

E. S. Lee, S. Park, O. Ell, P. Brick, H. M. Gibbs, G. Khitrova, D. G. Deppe, D. L. Huffaker

Optical Sciences, College of

Research output: Contribution to conference › Paper › peer-review

Abstract

Recent progress in microfabrication involving etching processes makes it possible to engineer 3-D nanostructures from MBE-grown planar Fabry-Perot microcavities. Here the optical mode is confined laterally by implementing a thin dielectric (native oxide) aperture layer on top of the cavity spacer. The sample under investigation consists of a 16 period GaAs/A1As bottom mirror, a λ GaAs spacer, and a 4-period ZnSe/MgF2 dielectric mirror on top of the oxide aperture. The aperture diameters range from 1 to 7 μm. A high-quality 85 angstrom InGaAs single quantum well is located in the anti-node of the spacer.

Original language	English (US)
Pages	58-59
Number of pages	2
State	Published - 2000
Event	Quantum Electronics and Laser Science Conference (QELS 2000) - San Francisco, CA, USA Duration: May 7 2000 → May 12 2000

Other

Other	Quantum Electronics and Laser Science Conference (QELS 2000)
City	San Francisco, CA, USA
Period	5/7/00 → 5/12/00

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

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title = "Normal mode coupling in a 3D semiconductor nanocavity",

abstract = "Recent progress in microfabrication involving etching processes makes it possible to engineer 3-D nanostructures from MBE-grown planar Fabry-Perot microcavities. Here the optical mode is confined laterally by implementing a thin dielectric (native oxide) aperture layer on top of the cavity spacer. The sample under investigation consists of a 16 period GaAs/A1As bottom mirror, a λ GaAs spacer, and a 4-period ZnSe/MgF2 dielectric mirror on top of the oxide aperture. The aperture diameters range from 1 to 7 μm. A high-quality 85 angstrom InGaAs single quantum well is located in the anti-node of the spacer.",

author = "Lee, {E. S.} and S. Park and O. Ell and P. Brick and Gibbs, {H. M.} and G. Khitrova and Deppe, {D. G.} and Huffaker, {D. L.}",

year = "2000",

language = "English (US)",

pages = "58--59",

note = "Quantum Electronics and Laser Science Conference (QELS 2000) ; Conference date: 07-05-2000 Through 12-05-2000",

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TY - CONF

T1 - Normal mode coupling in a 3D semiconductor nanocavity

AU - Lee, E. S.

AU - Park, S.

AU - Ell, O.

AU - Brick, P.

AU - Gibbs, H. M.

AU - Khitrova, G.

AU - Deppe, D. G.

AU - Huffaker, D. L.

PY - 2000

Y1 - 2000

N2 - Recent progress in microfabrication involving etching processes makes it possible to engineer 3-D nanostructures from MBE-grown planar Fabry-Perot microcavities. Here the optical mode is confined laterally by implementing a thin dielectric (native oxide) aperture layer on top of the cavity spacer. The sample under investigation consists of a 16 period GaAs/A1As bottom mirror, a λ GaAs spacer, and a 4-period ZnSe/MgF2 dielectric mirror on top of the oxide aperture. The aperture diameters range from 1 to 7 μm. A high-quality 85 angstrom InGaAs single quantum well is located in the anti-node of the spacer.

AB - Recent progress in microfabrication involving etching processes makes it possible to engineer 3-D nanostructures from MBE-grown planar Fabry-Perot microcavities. Here the optical mode is confined laterally by implementing a thin dielectric (native oxide) aperture layer on top of the cavity spacer. The sample under investigation consists of a 16 period GaAs/A1As bottom mirror, a λ GaAs spacer, and a 4-period ZnSe/MgF2 dielectric mirror on top of the oxide aperture. The aperture diameters range from 1 to 7 μm. A high-quality 85 angstrom InGaAs single quantum well is located in the anti-node of the spacer.

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M3 - Paper

AN - SCOPUS:0034540234

SP - 58

EP - 59

T2 - Quantum Electronics and Laser Science Conference (QELS 2000)

Y2 - 7 May 2000 through 12 May 2000

ER -

Normal mode coupling in a 3D semiconductor nanocavity

Abstract

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ASJC Scopus subject areas

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