Abstract
Recent progress in microfabrication involving etching processes makes it possible to engineer 3-D nanostructures from MBE-grown planar Fabry-Perot microcavities. Here the optical mode is confined laterally by implementing a thin dielectric (native oxide) aperture layer on top of the cavity spacer. The sample under investigation consists of a 16 period GaAs/A1As bottom mirror, a λ GaAs spacer, and a 4-period ZnSe/MgF2 dielectric mirror on top of the oxide aperture. The aperture diameters range from 1 to 7 μm. A high-quality 85 angstrom InGaAs single quantum well is located in the anti-node of the spacer.
Original language | English (US) |
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Pages | 58-59 |
Number of pages | 2 |
State | Published - 2000 |
Event | Quantum Electronics and Laser Science Conference (QELS 2000) - San Francisco, CA, USA Duration: May 7 2000 → May 12 2000 |
Other
Other | Quantum Electronics and Laser Science Conference (QELS 2000) |
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City | San Francisco, CA, USA |
Period | 5/7/00 → 5/12/00 |
ASJC Scopus subject areas
- General Physics and Astronomy