Nonorthogonal wafer dicing for waveguide, microelectromechanical systems, and nanotechnology applications

S. Pau; J. A. Taylor; C. S. Pai

doi:10.1116/1.1768184

Nonorthogonal wafer dicing for waveguide, microelectromechanical systems, and nanotechnology applications

S. Pau, J. A. Taylor, C. S. Pai

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

A technique to dice wafer was analyzed by using photolithography and reactive ion etching. The photoresists were used as a mask to protect the underlying device during the etching. It was observed that typical wafer cutting required a spacing of the order of about 100 μm. It was also observed that this technique could be used to cut very small die with almost any conceivable shape subject to the limitations of dry etching.

Original language	English (US)
Pages (from-to)	L15-L16
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	4
DOIs	https://doi.org/10.1116/1.1768184
State	Published - Jul 2004
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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10.1116/1.1768184

Cite this

@article{eafbefccbd874d5c87df3b8e1920f64d,

title = "Nonorthogonal wafer dicing for waveguide, microelectromechanical systems, and nanotechnology applications",

abstract = "A technique to dice wafer was analyzed by using photolithography and reactive ion etching. The photoresists were used as a mask to protect the underlying device during the etching. It was observed that typical wafer cutting required a spacing of the order of about 100 μm. It was also observed that this technique could be used to cut very small die with almost any conceivable shape subject to the limitations of dry etching.",

author = "S. Pau and Taylor, {J. A.} and Pai, {C. S.}",

year = "2004",

month = jul,

doi = "10.1116/1.1768184",

language = "English (US)",

volume = "22",

pages = "L15--L16",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - Nonorthogonal wafer dicing for waveguide, microelectromechanical systems, and nanotechnology applications

AU - Pau, S.

AU - Taylor, J. A.

AU - Pai, C. S.

PY - 2004/7

Y1 - 2004/7

N2 - A technique to dice wafer was analyzed by using photolithography and reactive ion etching. The photoresists were used as a mask to protect the underlying device during the etching. It was observed that typical wafer cutting required a spacing of the order of about 100 μm. It was also observed that this technique could be used to cut very small die with almost any conceivable shape subject to the limitations of dry etching.

AB - A technique to dice wafer was analyzed by using photolithography and reactive ion etching. The photoresists were used as a mask to protect the underlying device during the etching. It was observed that typical wafer cutting required a spacing of the order of about 100 μm. It was also observed that this technique could be used to cut very small die with almost any conceivable shape subject to the limitations of dry etching.

UR - http://www.scopus.com/inward/record.url?scp=4944255136&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4944255136&partnerID=8YFLogxK

U2 - 10.1116/1.1768184

DO - 10.1116/1.1768184

M3 - Article

AN - SCOPUS:4944255136

SN - 1071-1023

VL - 22

SP - L15-L16

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Nonorthogonal wafer dicing for waveguide, microelectromechanical systems, and nanotechnology applications

Abstract

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