Nonlinearities in the absorption and photoluminescence spectra of GaAs/AlAs type II heterostructures

G. R. Olbright; W. S. Fu; J. Klem; A. Owyoung; G. R. Hadley; R. Binder; Stephen W. Koch; I. Galbraith

Nonlinearities in the absorption and photoluminescence spectra of GaAs/AlAs type II heterostructures

G. R. Olbright, W. S. Fu, J. Klem, A. Owyoung, G. R. Hadley, R. Binder, Stephen W. Koch, I. Galbraith

Research output: Contribution to conference › Paper › peer-review

Abstract

The first observation of quasi-steady-state optical nonlinearities in the absorption and photoluminescence (PL) spectra of GaAs/AlAs type-II heterostructures is reported. Deep modulation, ΔT approximately 0.5(Δα = -50,000/cm), due to a >40-meV blue shift and bleaching of the heavy-hole exciton absorption peaks is observed using pump-probe spectroscopy. In addition, a blue shift of up to approximately 10 meV of the indirect PL line is observed with increasing PL excitation intensity. These nonlinearities are understood in terms of spatially separated layers of electrons and holes that are produced by the optical excitation process.

Original language	English (US)
Pages	124-125
Number of pages	2
State	Published - 1990
Externally published	Yes
Event	17th International Conference on Quantum Electronics - IQEC '90 - Anaheim, CA, USA Duration: May 21 1990 → May 25 1990

Other

Other	17th International Conference on Quantum Electronics - IQEC '90
City	Anaheim, CA, USA
Period	5/21/90 → 5/25/90

ASJC Scopus subject areas

General Engineering

Cite this

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title = "Nonlinearities in the absorption and photoluminescence spectra of GaAs/AlAs type II heterostructures",

abstract = "The first observation of quasi-steady-state optical nonlinearities in the absorption and photoluminescence (PL) spectra of GaAs/AlAs type-II heterostructures is reported. Deep modulation, ΔT approximately 0.5(Δα = -50,000/cm), due to a >40-meV blue shift and bleaching of the heavy-hole exciton absorption peaks is observed using pump-probe spectroscopy. In addition, a blue shift of up to approximately 10 meV of the indirect PL line is observed with increasing PL excitation intensity. These nonlinearities are understood in terms of spatially separated layers of electrons and holes that are produced by the optical excitation process.",

author = "Olbright, {G. R.} and Fu, {W. S.} and J. Klem and A. Owyoung and Hadley, {G. R.} and R. Binder and Koch, {Stephen W.} and I. Galbraith",

year = "1990",

language = "English (US)",

pages = "124--125",

note = "17th International Conference on Quantum Electronics - IQEC '90 ; Conference date: 21-05-1990 Through 25-05-1990",

}

TY - CONF

T1 - Nonlinearities in the absorption and photoluminescence spectra of GaAs/AlAs type II heterostructures

AU - Olbright, G. R.

AU - Fu, W. S.

AU - Klem, J.

AU - Owyoung, A.

AU - Hadley, G. R.

AU - Binder, R.

AU - Koch, Stephen W.

AU - Galbraith, I.

PY - 1990

Y1 - 1990

N2 - The first observation of quasi-steady-state optical nonlinearities in the absorption and photoluminescence (PL) spectra of GaAs/AlAs type-II heterostructures is reported. Deep modulation, ΔT approximately 0.5(Δα = -50,000/cm), due to a >40-meV blue shift and bleaching of the heavy-hole exciton absorption peaks is observed using pump-probe spectroscopy. In addition, a blue shift of up to approximately 10 meV of the indirect PL line is observed with increasing PL excitation intensity. These nonlinearities are understood in terms of spatially separated layers of electrons and holes that are produced by the optical excitation process.

AB - The first observation of quasi-steady-state optical nonlinearities in the absorption and photoluminescence (PL) spectra of GaAs/AlAs type-II heterostructures is reported. Deep modulation, ΔT approximately 0.5(Δα = -50,000/cm), due to a >40-meV blue shift and bleaching of the heavy-hole exciton absorption peaks is observed using pump-probe spectroscopy. In addition, a blue shift of up to approximately 10 meV of the indirect PL line is observed with increasing PL excitation intensity. These nonlinearities are understood in terms of spatially separated layers of electrons and holes that are produced by the optical excitation process.

UR - http://www.scopus.com/inward/record.url?scp=0025530549&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025530549&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0025530549

SP - 124

EP - 125

T2 - 17th International Conference on Quantum Electronics - IQEC '90

Y2 - 21 May 1990 through 25 May 1990

ER -

Nonlinearities in the absorption and photoluminescence spectra of GaAs/AlAs type II heterostructures

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