Abstract
The spatial separation of electrons and holes in n-i-p-i structures leads to large excess carrier populations even with low level illumination. Combined with hetero barriers (e.g., quantum wells) n-i-p-i structures exhibit large optical nonlinearities. The physics and applications of hetero n-i-p-i structures are reviewed.
Original language | English (US) |
---|---|
Pages | 60-63 |
Number of pages | 4 |
State | Published - 1988 |
Externally published | Yes |
Event | LEOS '88 - Lasers and Electro-Optics Society Annual Meeting - Santa Clara, CA, USA Duration: Nov 2 1988 → Nov 4 1988 |
Other
Other | LEOS '88 - Lasers and Electro-Optics Society Annual Meeting |
---|---|
City | Santa Clara, CA, USA |
Period | 11/2/88 → 11/4/88 |
ASJC Scopus subject areas
- Engineering(all)