Nonlinear Optical Pulse Propagation in a Semiconductor Medium in the Transient Regime—I: Temporal and Spectral Effects

Neil Finlayson; E. M. Wright; George I. Stegeman

doi:10.1109/3.53395

Nonlinear Optical Pulse Propagation in a Semiconductor Medium in the Transient Regime—I: Temporal and Spectral Effects

Neil Finlayson, E. M. Wright, George I. Stegeman

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The propagation of optical pulses in a semiconductor medium is modeled in the limit where the optical pulse width is assumed to be shorter than the interband recombination time of the semiconductor. Intense pulses cause saturation of the optical transitions, leading to transient changes in the absorption and refractive index of the semiconductor. The changes in absorption and refractive index lead to distortions in the spectra of the pulses.

Original language	English (US)
Pages (from-to)	770-777
Number of pages	8
Journal	IEEE Journal of Quantum Electronics
Volume	26
Issue number	4
DOIs	https://doi.org/10.1109/3.53395
State	Published - Apr 1990

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/3.53395

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title = "Nonlinear Optical Pulse Propagation in a Semiconductor Medium in the Transient Regime—I: Temporal and Spectral Effects",

abstract = "The propagation of optical pulses in a semiconductor medium is modeled in the limit where the optical pulse width is assumed to be shorter than the interband recombination time of the semiconductor. Intense pulses cause saturation of the optical transitions, leading to transient changes in the absorption and refractive index of the semiconductor. The changes in absorption and refractive index lead to distortions in the spectra of the pulses.",

author = "Neil Finlayson and Wright, {E. M.} and Stegeman, {George I.}",

note = "Funding Information: Manuscript received July 31, 1989; revised October 23, 1989. This work was supported by the National Science Foundation under Grant ECS- 8664374, the U.S. Army Research Office under Cont.ict DAAL03-88-K-0066, and the Optical Circuitry Cooperative.",

year = "1990",

month = apr,

doi = "10.1109/3.53395",

language = "English (US)",

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pages = "770--777",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Nonlinear Optical Pulse Propagation in a Semiconductor Medium in the Transient Regime—I

T2 - Temporal and Spectral Effects

AU - Finlayson, Neil

AU - Wright, E. M.

AU - Stegeman, George I.

N1 - Funding Information: Manuscript received July 31, 1989; revised October 23, 1989. This work was supported by the National Science Foundation under Grant ECS- 8664374, the U.S. Army Research Office under Cont.ict DAAL03-88-K-0066, and the Optical Circuitry Cooperative.

PY - 1990/4

Y1 - 1990/4

N2 - The propagation of optical pulses in a semiconductor medium is modeled in the limit where the optical pulse width is assumed to be shorter than the interband recombination time of the semiconductor. Intense pulses cause saturation of the optical transitions, leading to transient changes in the absorption and refractive index of the semiconductor. The changes in absorption and refractive index lead to distortions in the spectra of the pulses.

AB - The propagation of optical pulses in a semiconductor medium is modeled in the limit where the optical pulse width is assumed to be shorter than the interband recombination time of the semiconductor. Intense pulses cause saturation of the optical transitions, leading to transient changes in the absorption and refractive index of the semiconductor. The changes in absorption and refractive index lead to distortions in the spectra of the pulses.

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JF - IEEE Journal of Quantum Electronics

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ER -

Nonlinear Optical Pulse Propagation in a Semiconductor Medium in the Transient Regime—I: Temporal and Spectral Effects

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