Nonlinear measurements in multiple quantum wells of gaas/algaas fabricated by MOCVD

A. Kost, M. Kawase, E. Garmire, H. C. Lee, A. Danner, A. Hariz, P. D. Dapkus

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


We discuss the saturation intensities and saturation densities as a function of well width for the room temperature excitonic absorption resonance of GaAs/A1GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition. The optimum growth temperature is considered. We discuss techniques for calculating absorption coefficients that remove Fabry-Perot effects as well as the effects of carrier diffusion. The difference between pulsed and CW excitation of the mutliple quantum wells is addressed. We discuss the calculation of the nonlinear index of refraction from a discrete set of absorption data. We introduce a new structure (a hetero n-i-p-i) which combines the advantages of multiple quantum wells and doping superlattices.

Original languageEnglish (US)
Pages (from-to)122-130
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - May 3 1988
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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