Nonlinear absorption in AlGaAs/GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition

H. C. Lee; A. Hariz; P. D. Dapkus; A. Kost; M. Kawase; E. Garmire

doi:10.1063/1.97904

Nonlinear absorption in AlGaAs/GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition

H. C. Lee, A. Hariz, P. D. Dapkus, A. Kost, M. Kawase, E. Garmire

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We report the study of growth conditions for achieving the sharp exciton resonances and low intensity saturation of these resonances in AlGaAs-GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition. Low growth temperature is necessary to observe this sharp resonance feature at room temperature. The optimal growth conditions are a tradeoff between the high temperatures required for high quality AlGaAs and low temperatures required for high-purity GaAs. A strong optical saturation of the excitonic absorption has been observed. A saturation density as low as 250 W/cm² is reported.

Original language	English (US)
Pages (from-to)	1182-1184
Number of pages	3
Journal	Applied Physics Letters
Volume	50
Issue number	17
DOIs	https://doi.org/10.1063/1.97904
State	Published - 1987
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.97904

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title = "Nonlinear absorption in AlGaAs/GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition",

abstract = "We report the study of growth conditions for achieving the sharp exciton resonances and low intensity saturation of these resonances in AlGaAs-GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition. Low growth temperature is necessary to observe this sharp resonance feature at room temperature. The optimal growth conditions are a tradeoff between the high temperatures required for high quality AlGaAs and low temperatures required for high-purity GaAs. A strong optical saturation of the excitonic absorption has been observed. A saturation density as low as 250 W/cm2 is reported.",

author = "Lee, {H. C.} and A. Hariz and Dapkus, {P. D.} and A. Kost and M. Kawase and E. Garmire",

year = "1987",

doi = "10.1063/1.97904",

language = "English (US)",

volume = "50",

pages = "1182--1184",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Nonlinear absorption in AlGaAs/GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition

AU - Lee, H. C.

AU - Hariz, A.

AU - Dapkus, P. D.

AU - Kost, A.

AU - Kawase, M.

AU - Garmire, E.

PY - 1987

Y1 - 1987

N2 - We report the study of growth conditions for achieving the sharp exciton resonances and low intensity saturation of these resonances in AlGaAs-GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition. Low growth temperature is necessary to observe this sharp resonance feature at room temperature. The optimal growth conditions are a tradeoff between the high temperatures required for high quality AlGaAs and low temperatures required for high-purity GaAs. A strong optical saturation of the excitonic absorption has been observed. A saturation density as low as 250 W/cm2 is reported.

AB - We report the study of growth conditions for achieving the sharp exciton resonances and low intensity saturation of these resonances in AlGaAs-GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition. Low growth temperature is necessary to observe this sharp resonance feature at room temperature. The optimal growth conditions are a tradeoff between the high temperatures required for high quality AlGaAs and low temperatures required for high-purity GaAs. A strong optical saturation of the excitonic absorption has been observed. A saturation density as low as 250 W/cm2 is reported.

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DO - 10.1063/1.97904

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EP - 1184

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Nonlinear absorption in AlGaAs/GaAs multiple quantum well structures grown by metalorganic chemical vapor deposition

Abstract

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