@inproceedings{3a6e1e86844448b7b82b97678c39e854,
title = "Nonequilibrium theory for semiconductor laser systems",
abstract = "A dynamical laser model is coupled to a fully microscopic calculation of scattering rates, allowing efficient calculations without phenomenological parameters. The approach is used to analyze nonequilibrium effects in the switch-on of an optically pumped laser structure. Lasing leads to kinetic hole burning in both electron and hole distribution. The gain spectrum, however, does not show spectrally narrow hole burning but a reduction over a wide range of frequencies compared to the equilibrium gain because of the large homogeneous broadening in the high density lasing system.",
keywords = "Hole burning, Microscopic gain calculations, Nonequilibrium effects, Quantum well lasers, Transient gain",
author = "A. Thr{\"a}nhardt and S. Becker and C. Schlichenmaier and I. Kuznetsova and Koch, {S. W.} and J. Hader and Moloney, {J. V.} and Chow, {W. W.}",
year = "2006",
doi = "10.1117/12.661349",
language = "English (US)",
isbn = "0819461571",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Physics and Simulation of Optoelectronic Devices XIV",
note = "Physics and Simulation of Optoelectronic Devices XIV ; Conference date: 22-01-2006 Through 26-01-2006",
}