Abstract
Several models for 1/f noise in silicon which give identical predictions for noise spectra were found to give distinct predictions for non-Gaussian effects as shown by Monte Carlo simulations. Measurements on silicon-on-sapphire resistors ranging in area to less than 1 (m)2 revealed both non-Gaussian effects and sample-to-sample spectral variations. The results were qualitatively similar to those expected for a simple superposition of two-level trapping systems and dissimilar to those for a random walk in a random potential. However, some random modulation of some of the two-level systems was found.
Original language | English (US) |
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Pages (from-to) | 2254-2262 |
Number of pages | 9 |
Journal | Physical Review B |
Volume | 31 |
Issue number | 4 |
DOIs | |
State | Published - 1985 |
ASJC Scopus subject areas
- Condensed Matter Physics